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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >A Fully Integrated X-Band Phased-Array Transceiver in 0.13- SiGe BiCMOS Technology
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A Fully Integrated X-Band Phased-Array Transceiver in 0.13- SiGe BiCMOS Technology

机译:采用0.13-SiGe BiCMOS技术的全集成X波段相控阵收发器

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This paper presents the design of an X-band phased-array transceiver core chip in 0.13- SiGe BiCMOS technology. The system is based on the all-RF architecture and contains switches, low-noise amplifier (LNA), power amplifier (PA), and the common leg 5-bit phase shifter with loss compensation amplifiers. A distributed structure is used in the gain amplifiers design to ease the multi-stage gain roll-off in the transmit (TX)/receive (RX) paths. A distributed LNA is utilized in the RX path to achieve broadband amplification with acceptable noise figure (NF) while a stacked PA is utilized in the TX path to get high output power. In the RX mode, the receiver demonstrates a gain of , an average NF of 3 dB, an output of 6 dBm, a root mean square (rms) phase error less than 3.8 and an rms gain error less than 1.2 dB from 9 to 11 GHz; while dissipating 352-mW dc power. In the TX mode, the transmitter demonstrates a gain of , an output of 28 dBm, an rms phase error less than 3, and an rms gain error less than 0.6 dB from 9 to 11 GHz; while dissipating 4.128-W dc power. The whole transceiver occupies 5.23 chip area including the testing pads.
机译:本文介绍了采用0.13-SiGe BiCMOS技术的X波段相控阵收发器核心芯片的设计。该系统基于全RF架构,包含开关,低噪声放大器(LNA),功率放大器(PA)以及带有损耗补偿放大器的公共支路5位移相器。增益放大器设计中使用了分布式结构,以简化发射(TX)/接收(RX)路径中的多级增益衰减。 RX路径中使用了分布式LNA,以实现具有可接受噪声系数(NF)的宽带放大,而TX路径中使用了堆叠式PA,以获得高输出功率。在RX模式下,接收器在9至11之间显示出增益为,平均NF为3 dB,输出为6 dBm,均方根(rms)相位误差小于3.8,均方根增益误差小于1.2 dB。 GHz;同时耗散352 mW的直流功率。在TX模式下,发射机在9至11 GHz范围内的增益为,输出为28 dBm,均方根相位误差小于3,均方根增益误差小于0.6 dB;同时消耗4.128 W直流电源。整个收发器(包括测试垫)占用5.23芯片面积。

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