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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier
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A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier

机译：并发双频谐波调谐功率放大器的设计技术

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摘要

In this paper, a novel technique to design concurrent dual-band high-efficiency harmonic tuned (HT) power amplifiers (PAs) is presented. The proposed approach is based on a methodology developed to design multifrequency passive matching networks, which allows concurrent operability. The network design criterion is heavily investigated and later generalized both from the theoretical and practical point of view. The design, realization, and the complete characterization of a concurrent dual-band high-efficiency HT PA is finally described. A 1-mm gate periphery GaN HEMT device was used for the design and realization of the PA operating concurrently at 2.45 and 3.3 GHz. The measurement results have shown 53% and 46% drain efficiency at 33- and 32.5-dBm output power in the two targeted bands if operated in continuous wave single mode. In concurrent mode, 35% average efficiency was achieved with two simultaneously applied orthogonal frequency-division multiplexing signals.
机译：本文提出了一种新颖的设计并发双频高效谐波调谐（HT）功率放大器（PA）的技术。所提出的方法基于开发用于设计多频无源匹配网络的方法，该方法允许并发可操作性。对网络设计标准进行了大量研究，后来从理论和实践的角度对其进行了概括。最后描述了并发双频高效HT PA的设计，实现和完整特性。 1mm栅极外围GaN HEMT器件用于设计和实现在2.45和3.3 GHz下同时工作的功率放大器。测量结果显示，如果以连续波单模模式工作，则在两个目标频带中，输出功率分别为33和32.5 dBm时，漏极效率为53％和46％。在并发模式下，两个同时应用的正交频分复用信号的平均效率达到35％。

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