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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Optical control of microwave-integrated circuits using high-speed GaAs and Si photoconductive switches
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Optical control of microwave-integrated circuits using high-speed GaAs and Si photoconductive switches

机译：使用高速GaAs和Si光电导开关的微波集成电路的光学控制

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摘要

An optoelectronic attenuator suitable for the optical control of microwave-integrated circuits is presented. High-speed photoconductive switches are embedded in planar microwave transmission lines fabricated on both semi-insulating GaAs and high-resistivity silicon substrates, and a fiber pigtailed semiconductor laser diode is used to control the microwave signal level on these high-speed lines. Forty-five dB of microwave attenuation was demonstrated with a silicon coplanar waveguide-photoconductive switch, while up to 8.5 dB of attenuation was achieved with a GaAs device. In addition, the optically induced phase delay through the silicon device was observed to be as large as 180/spl deg/. The microwave performance of these photoconductive devices has been fully characterized and their suitability for various optical control applications compared. So that one can optimize the laser diode/GaAs photoconductive device interaction, the GaAs device has been characterized as a function of laser photon energy, switch temperature, and applied dc electric field, and the optimum operating point has been determined through experiment.
机译：提出了一种适用于微波集成电路的光学控制的光电衰减器。高速光电导开关嵌入在半绝缘GaAs和高电阻率硅衬底上制造的平面微波传输线中，并且光纤尾纤半导体激光二极管用于控制这些高速线上的微波信号电平。硅共面波导-光电导开关显示了45 dB的微波衰减，而GaAs器件可实现8.5 dB的衰减。另外，观察到通过硅器件的光致相位延迟大到180 / spl deg /。这些光电导器件的微波性能已得到充分表征，并比较了它们在各种光学控制应用中的适用性。为了使激光二极管/ GaAs光电导器件之间的相互作用最优化，GaAs器件的特征在于它具有激光光子能量，开关温度和施加的直流电场的作用，并通过实验确定了最佳工作点。

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