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首页> 外文期刊>IEEE transactions on nanotechnology >A Study of Electrical Resistance in Carbon Nanotube–Insulator–Metal Diode Arrays for Optical Rectenna
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A Study of Electrical Resistance in Carbon Nanotube–Insulator–Metal Diode Arrays for Optical Rectenna

机译：碳纳米管-绝缘子-金属二极管阵列的光学电阻研究

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Vertical tunnel diode arrays made from multiwall carbon nanotubes (MWCNTs) have shown recent promise for developing a practical optical rectenna, which is a device to convert electromagnetic waves at optical frequencies to direct current. Realizing an optical rectenna requires an antenna to be coupled to a diode that operates on the order of PHz (switching speed on the order of fs). Previously, we have demonstrated an optical rectenna device by engineering MWCNT–insulator–metal (MWCNT–I–M) tunnel diodes at the tips of vertically aligned MWCNT arrays, which act collectively as the antenna. However, the high electrical resistance of the MWCNT–I–M diode must be reduced to enable improved impedance matching between diode and antenna, which limited the rectified power in our prior work. Here, we address this issue of impedance mismatch through a series of experiments designed to elucidate contributions to the total electrical resistance of the device. Different combinations of metals, and metal and insulator thicknesses were tested for reduced contact resistance, while maintaining a working diode. Another development toward reducing resistance was to open MWCNT tips using oxygen plasma, which exposed multiple walls for bonding rather than just outer wall of closed tip CNTs. These developments were combined to reduce zero-bias resistance of MWCNT–I–M diode arrays to as low as 100 Ω ·cm2, which is 75 times lower than in our previous report.
机译：由多壁碳纳米管（MWCNT）制成的垂直隧道二极管阵列显示了开发实用的光学整流天线的近期前景，该天线可将光频率的电磁波转换为直流电。要实现光学整流天线，需要将天线耦合到以PHz数量级（开关速度为fs数量级）工作的二极管。以前，我们已经通过在垂直排列的MWCNT阵列的尖端设计了MWCNT-绝缘体-金属（MWCNT-I-M）隧道二极管来演示了光学整流天线装置，该阵列共同充当天线。但是，必须降低MWCNT–I–M二极管的高电阻，以改善二极管和天线之间的阻抗匹配，这限制了我们先前的工作中的整流功率。在这里，我们通过一系列旨在阐明对设备总电阻的影响的实验来解决阻抗不匹配的问题。测试了金属的不同组合以及金属和绝缘体的厚度，以降低接触电阻，同时保持二极管的正常工作。降低电阻的另一个进展是使用氧等离子体打开MWCNT尖端，该等离子体暴露了多个壁以进行键合，而不仅仅是闭合尖端CNT的外壁。这些发展相结合，将MWCNT–IM二极管阵列的零偏置电阻降低至100Ω·cm2，这比我们先前的报告低75倍。

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