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Spin Circuit Representation for the Spin Hall Effect

机译:自旋霍尔效应的自旋电路表示

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摘要

Spin circuits with four component voltages and currents have been developed and used in the past to analyze various structures, which include non-collinear ferromagnets. Recent demonstrations of large spin orbit torques in heavy metals like Pt, Ta, and W open up new possibilities in spintronic applications by providing an alternative way to write information into a magnet. Here, we extend the four component (one charge and three spins) conductance matrix to include materials with spin Hall effect based on the standard diffusion equation. Our proposed spin circuit successfully reproduces standard results like spin Hall effect (SHE), inverse spin Hall effect, and spin Hall magnetoresistance. This circuit representation also makes it straightforward to analyze new configurations. We present two examples, namely, 1) the possibility of spin injection using giant SHE (GSHE) materials into semiconductors without tunneling barriers, and 2) the effect of spin ground on one surface to enhance spin current injection from the opposite surface in a thin GSHE sample. Finally, we provide an elemental conductance matrix for a small cubic structure which can be used as a building block to analyze any arbitrarily shaped GSHE material.
机译:过去已经开发出具有四个分量电压和电流的自旋电路,并用于分析各种结构,其中包括非共线铁磁体。 Pt,Ta和W等重金属中大自旋轨道转矩的最新演示通过提供将信息写入磁体的另一种方式,在自旋电子学应用中开辟了新的可能性。在这里,我们根据标准扩散方程扩展了四个分量(一个电荷和三个自旋)的电导矩阵,以包括具有自旋霍尔效应的材料。我们提出的自旋电路成功地再现了标准结果,例如自旋霍尔效应(SHE),逆自旋霍尔效应和自旋霍尔磁阻。该电路表示也使分析新配置变得简单明了。我们提供两个示例,即:1)使用巨型SHE(GSHE)材料自旋注入到没有隧穿势垒的半导体中的可能性,以及2)在一个表面上自旋磨削的效果,以增强从薄壁中相对表面的自旋电流注入GSHE样品。最后,我们提供了用于小立方结构的元素电导矩阵,该矩阵可用作构建块,以分析​​任何形状的GSHE材料。

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