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首页> 外文期刊>IEEE transactions on nanotechnology >Electrical Modeling and Analysis of a Mixed Carbon Nanotube Based Differential Through Silicon via in 3-D Integration
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Electrical Modeling and Analysis of a Mixed Carbon Nanotube Based Differential Through Silicon via in 3-D Integration

机译：3-D集成中基于混合碳纳米管的硅微分通孔的电学建模和分析

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摘要

Based on the extracted equivalent parasitic parameters, the distributed transmission line model of a mixed carbon nanotube bundle (MCB) built signal-ground-signal-type differential through silicon via (TSV) is established and validated against the multiconductor transmission line model (MTL) results and predictive experiment results over a wide frequency range. Using the proposed model, the effect of various dimensional parameters and material properties on the signal loss and characteristic impedances of the differential TSV interconnect is investigated for odd- and even-mode signal propagation, respectively. It is observed that dielectric thickness is the most important factor affecting the transmission characteristics of TSV interconnects for the proposed TSV configuration. Moreover, various electrical performances of the proposed differential TSV, such as insertion loss, eye opening area, characteristic impedances, and 50% time delay are evaluated and compared to that of a signal-ground-type single ended TSV interconnect. The results presented in this paper will be helpful to fully understand the CNT-TSV electrical characterization and provide some signal integrity-aware guidelines for circuit designers in early planning stage.
机译：基于提取的等效寄生参数，建立混合碳纳米管束（MCB）通过硅过孔（TSV）建立的信号-地-信号型差分的传输线模型，并针对多导体传输线模型（MTL）进行验证结果和预测性实验结果在很宽的频率范围内。使用提出的模型，分别研究了奇数和偶数信号传播中各种尺寸参数和材料特性对差分TSV互连的信号损耗和特征阻抗的影响。可以看出，对于建议的TSV配置，电介质厚度是影响TSV互连的传输特性的最重要因素。此外，评估了所提出的差分TSV的各种电性能，例如插入损耗，眼图张开面积，特征阻抗和50％的时间延迟，并将其与信号接地型单端TSV互连的电性能进行了比较。本文中提出的结果将有助于全面了解CNT-TSV的电气特性，并为电路设计者的早期规划阶段提供一些信号完整性感知指南。

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