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首页> 外文期刊>IEEE transactions on nanotechnology >Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes
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Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

机译：基于InGaN的绿色激光二极管中的降解和波长波动的纳米尺度研究

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摘要

We present a study of the optical inhomogeneities and degradation of InGaN-based green laser diodes based on high-resolution cathodoluminescence (CL) investigation of the output facets and inner cross-section of the devices. The results indicate that 1) degradation originates from a diffusion process, which causes an increase in the threshold current. 2) Nanoscale-level CL points out the circular symmetry of the degraded area, which is wider than the ridge and includes not only the quantum wells but also the waveguiding and cladding layers. 3) The yellow luminescence decreases within the degraded region, whereas its intensity increases outside of the degraded region. 4) Wavelength fluctuations are found in both quantum wells and waveguides, which are critically analyzed and ascribed to inhomogeneity in indium concentration. Their possible effect in the filamentation of the laser emission is discussed.
机译：我们基于输出面和器件内部截面的高分辨率阴极发光（CL）研究，对基于InGaN的绿色激光二极管的光学不均匀性和退化进行了研究。结果表明：1）退化源自扩散过程，这导致阈值电流增加。 2）纳米级CL指出了退化区域的圆形对称性，它比脊宽，不仅包括量子阱，而且包括波导层和包层。 3）在退化区域内黄色发光减少，而在退化区域外其强度增加。 4）在量子阱和波导中都发现了波长波动，对此进行了严格的分析，并将其归因于铟浓度的不均匀性。讨论了它们在激光发射灯丝化中的可能作用。

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