A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

Vipin Joshi; Ankit Soni; Shree Prakash Tiwari; Mayank Shrivastava

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A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

机译：AlGaN / GaN HEMT的综合计算建模方法

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This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.

机译：本文首次提出了一种用于AlGaN / GaN高电子迁移率晶体管的综合计算建模方法。建模和研究了不同材料界面上的极化电荷对能带分布以及外延叠层上的寄生电荷的影响。此外，本文还讨论了表面陷阱和体陷阱对二维电子气，器件特性和栅极泄漏的影响。首次将模拟为施主型陷阱的表面状态与栅极泄漏相关联。此外，提出了一种精确建模肖特基栅极器件中正向栅极泄漏的新方法。最后，研究了晶格和载流子加热的影响，同时强调了载流子加热，晶格加热和体阱在器件特性上的相关性。除此之外，还提出了其他关键方面的建模策略，例如寄生电荷，量子效应，S / D肖特基接触和高场效应。

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来源
《IEEE transactions on nanotechnology》 |2016年第6期|947-955|共9页
作者
Vipin Joshi; Ankit Soni; Shree Prakash Tiwari; Mayank Shrivastava;
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作者单位

Department of Electrical Engineering at Indian Institute of Technology Jodhpur, Jodhpur, India;

Advanced Nanoelectronic Device and Circuit Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India;

Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India;

Advanced Nanoelectronic Device and Circuit Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India;

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原文格式 PDF
正文语种 eng
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关键词
HEMTs; MODFETs; Aluminum gallium nitride; Wide band gap semiconductors; Computational modeling; Electron traps; Gallium nitride;

机译：HEMT;MODFET;氮化铝镓;宽带隙半导体;计算模型;电子陷阱;氮化镓;

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1. NEURAL MODELING APPROACH FOR TRAPPING AND THERMAL EFFECTS ON ALGAN/GAN HEMT [J] . Elhamadi Taj-Eddin, Boussouis Mohamed, Touhami Naima Amar, Microwave and optical technology letters . 2017,第5期

机译：Algan / GaN HEMT捕获和热效应的神经建模方法
2. An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects [J] . A. Bellakhdar, A. Telia, J. L. Coutaz International Journal of Electrical and Computer Engineering . 2020,第2期

机译：Gan-Cappe AlGaN / GaN和Alinn / GaN Hemts电流电压特性的分析模型，包括热和自热效应
3. Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor [J] . Abdulsalam Azwar, Karumuri Naveen, Dutta Gourab IEEE Transactions on Electron Devices . 2020,第9期

机译：常关P-GaN门Algan / GaN HEMT作为片上电容的建模与分析
4. An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect [C] . M. Zhang, W. Che, K. Ma IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications . 2016

机译：包含综合热效应的AlGaN / GaN HEMT的改进的大信号模型
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明

A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

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