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首页> 外文期刊>IEEE transactions on nanotechnology >Intersubband Transition in Asymmetric Quantum Well Infrared Photodetector
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Intersubband Transition in Asymmetric Quantum Well Infrared Photodetector

机译：非对称量子阱红外光电探测器的子带间跃迁

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摘要

Intersubband transition in perfect rectangular quantum well is known to be limited by “selection rule” that results from certain symmetries of wavefunctions. This letter presents Green's function-based analysis that incorporates energy state broadening due to optical absorption and shows how stepped quantum well can introduce required “asymmetry” to defy the selection rule by breaking the bound state wavefunction symmetry and thus improve the overall optical absorption. Calculation for Al$_{x}$ Ga$_{1-x}$As/GaAs/In $_{y}$Ga$_{1-y}$As stepped quantum well confirms that coupling among certain energy states increases with asymmetry and, as a result, so does the magnitude of optical absorption. The simulation approach presented is simple, physically intuitive, and extendable to any arbitrary shaped asymmetric quantum well.
机译：众所周知，理想矩形量子阱中的子带间跃迁受波函数某些对称性所导致的“选择规则”的限制。这封信提出了格林基于函数的分析方法，该方法结合了由于光吸收而引起的能态展宽，并展示了阶梯式量子阱如何通过打破束缚态波函数对称性来引入所需的“不对称性”以克服选择规则，从而改善了整体光吸收性。 Al <配方公式type =“ inline”> $ _ {x} $ Ga $ _ {1-x} $ As / GaAs / In $ _ {y} $ Ga $ _ {1-y} $ 随着阶梯式量子阱的证实，某些能态之间的耦合会随着不对称而增加，结果，光吸收的幅度也增加了。提出的仿真方法简单，物理直观，并且可以扩展到任意形状的非对称量子阱。

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