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首页> 外文期刊>IEEE Transactions on Nuclear Science >Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs
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Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

机译：中子辐照对AlInN / GaN HEMT中NGB应力引起的电子陷阱的影响

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摘要

This paper shows the impact of low fluence neutron irradiation on AlInN/GaN HEMTs before and after a negative gate bias stress done at a gate-to-source voltage ( of −20 V and at a drain-to-source voltage ( of 0 V during 216 h. We have shown that the neutron irradiation induces a decrease in the drain current of 6% and an increase in access resistance of 8% for the unstressed component in opposite to the stressed component. In fact, a rise in drain current of 9% and no evolution of the access resistance have been observed for a stressed AlInN/GaN HEMT. This phenomenon is related to the formation of complex cluster between the electron traps induced by the aging test and those involved by the neutron irradiation.
机译：本文显示了低通量中子辐照对栅极-源极电压（-20 V和漏极-源极电压（0 V）施加负栅极偏压之前和之后对AlInN / GaN HEMT的影响在216 h内，我们发现中子辐照导致与受压组件相反，无受压组件的漏极电流降低6％，而接入电阻则增加8％。应力AlInN / GaN HEMT的9％且未观察到访问电阻的变化，此现象与老化测试引起的电子陷阱与中子辐照的电子陷阱之间形成复杂簇有关。

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  • 来源
    《IEEE Transactions on Nuclear Science》 |2017年第8期|2284-2291|共8页
  • 作者

    S. Petitdidier; Y. Guhel; G. Brocero; P. Eudeline; J. L. Trolet; P. Mary; C. Gaquière; B. Boudart;

  • 作者单位

    Laboratoire Universitaire des Sciences Appliquées de Cherbourg, Normandie Université, UNICAEN, LUSAC, Cherbourg-Octeville, France;

    Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC, Caen, France;

    Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC, Caen, France;

    Department of Technology and Innovation Thales Air Systems, Ymare, France;

    Ecole des Applications Militaires de l’Energie Atomique, Boulevard de la Bretonnière, Cherbourg Armées, France;

    Ecole des Applications Militaires de l’Energie Atomique, Boulevard de la Bretonnière, Cherbourg Armées, France;

    Institut d’Electronique, de Microélectronique et de Nanotechnologie, Villeneuve d’Ascq, France;

    Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC, Caen, France;

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  • 正文语种 eng
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  • 关键词

    Neutrons; Radiation effects; HEMTs; MODFETs; Electron traps; Aluminum gallium nitride; Wide band gap semiconductors;

    机译：中子;辐射效应;HEMTs;MODFETs;电子陷阱;氮化铝镓;宽带隙半导体;

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