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首页> 外文期刊>IEEE Transactions on Nuclear Science >Effects of Air Annealing on Luminescent Properties of Cerium-Doped Lutetium Oxyorthosilicate Scintillation Ceramics
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Effects of Air Annealing on Luminescent Properties of Cerium-Doped Lutetium Oxyorthosilicate Scintillation Ceramics

机译：空气退火对铈掺杂氧正硅酸ute闪烁陶瓷发光性能的影响

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摘要

Cerium-doped lutetium oxyorthosilicate (: 0.5 mol%Ce, LSO:Ce) scintillation ceramics was fabricated by pre-sintering at for 4 h in air followed by a post hot isostatic pressing (HIP) at under 150 MPa for 1 h in Ar atmosphere. Luminescent and scintillation properties of the as-HIPed LSO:Ce ceramics was seriously affected by these oxygen vacancies. They were effectively filled through a post-annealing at for 4 h in air. Ce edge X-ray absorption near edge structure (XANES) spectra of LSO:Ce ceramics manifest that most of Ce ions in LSO ceramics still remain Ce(III) valence state after annealing in air. Photoluminescence (PL) and PL excitation (PLE) spectra show that emission intensity of the as-HIPed LSO:Ce ceramics was about 3 times lower than that of post-annealed sample. Light yield of the post-annealed LSO:Ce ceramics reaches 2.7 times of that of the as-HIPed sample, which exceeds 3 times of the light yield of BGO crystal.
机译：铈掺杂oxy原硅酸（（：0.5mol％Ce，LSO：Ce）闪烁陶瓷是通过在空气中于550摄氏度下预烧结4小时，然后在Ar气氛下于150 MPa下进行热等静压（HIP）1小时来制造的。这些氧空位严重影响了原样的LSO：Ce陶瓷的发光和闪烁特性。通过在空气中进行4小时的后退火，有效地填充了它们。 LSO：Ce陶瓷的Ce边缘X射线吸收近边缘结构（XANES）光谱表明，LSO陶瓷中的大多数Ce离子在空气中退火后仍保持Ce（III）价态。光致发光（PL）和PL激发（PLE）光谱表明，原样HIP的LSO：Ce陶瓷的发射强度比退火后的样品低约3倍。后退火的LSO：Ce陶瓷的光产量达到原样HIP样品的2.7倍，是BGO晶体的3倍。

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