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首页> 外文期刊>Nuclear Science, IEEE Transactions on >Effect of Temperature Variation on the Energy Response of a Photon Counting Silicon CT Detector
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Effect of Temperature Variation on the Energy Response of a Photon Counting Silicon CT Detector

机译：温度变化对光子计数硅CT探测器能量响应的影响

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摘要

The effect of temperature variation on pulse height determination accuracy is determined for a photon counting multibin silicon detector developed for spectral CT. Theoretical predictions of the temperature coefficient of the gain and offset are similar to values derived from synchrotron radiation measurements in a temperature controlled environment. By means of statistical modeling, we conclude that temperature changes affect all channels equally and with separate effects on gain and threshold offset. The combined effect of a 1$^{circ}{hbox {C}}$ temperature increase is to decrease the detected energy by 0.1 keV for events depositing 30 keV. For the electronic noise, no statistically significant temperature effect was discernible in the data set, although theory predicts a weak dependence. The method is applicable to all x-ray detectors operating in pulse mode.
机译：对于为光谱CT开发的光子计数多仓硅探测器，确定了温度变化对脉冲高度确定精度的影响。增益和失调温度系数的理论预测类似于在温度受控环境下从同步加速器辐射测量得出的值。通过统计建模，我们得出结论，温度变化会平等地影响所有通道，并对增益和阈值偏移具有单独的影响。温度升高1 $ {circ} {hbox {C}} $的综合效果是，对于沉积30 keV的事件，检测到的能量降低了0.1 keV。对于电子噪声，尽管理论上预测了较弱的依赖性，但在数据集中没有明显的统计学意义的温度影响。该方法适用于所有以脉冲模式运行的X射线探测器。

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