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首页> 外文期刊>IEEE Transactions on Nuclear Science >Characterization of an Innovative p-type Epitaxial Diode for Dosimetry in Modern External Beam Radiotherapy
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Characterization of an Innovative p-type Epitaxial Diode for Dosimetry in Modern External Beam Radiotherapy

机译：现代外束放射治疗中剂量学创新的p型外延二极管的特性

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摘要

Due to the ever-increasing complexity of treatment modalities in radiation therapy, there has been a greater need for detectors to perform quality assurance to ensure patients are treated correctly and safely. Modern radiation therapy techniques involve small field sizes, high dose gradients, and varying intensity of energy and rate. The ideal dosimeter for this treatment should display high spatial resolution, high linearity, accuracy, and radiation hardness. Silicon detectors have been widely used for radiotherapy measurements and have many attractive qualities as a dosimeter; weaknesses of silicon detectors are, however, decreases in sensitivity with accumulated dose. The Centre for Medical Radiation Physics has developed a new technology with an unusual charge collection efficiency variation with accumulated dose which stabilizes the response of the detector within ±5% after 120 kGy photon irradiation. The sensor has been also characterized by irradiation by an 18 MV medical LINAC with sensitivity to a photoneutron-induced damage of less than 0.5%/100 Gy. The radiation damage mechanism has been validated by TCAD simulations which confirmed the mechanism behind the CCE increase as a function of the accumulated dose.
机译：由于放射疗法中治疗方式的日益复杂，对检测器执行质量保证以确保正确，安全地治疗患者的需求越来越大。现代放射治疗技术涉及较小的视野，高剂量梯度以及变化的能量和速率强度。这种治疗的理想剂量计应显示出高空间分辨率，高线性度，准确性和辐射硬度。硅探测器已被广泛用于放射治疗测量，并具有许多吸引人的质量，如剂量计。但是，硅检测器的弱点是随着累积剂量的增加而灵敏度降低。医学辐射物理中心开发了一种新技术，该技术具有随累积剂量而产生的不寻常的电荷收集效率变化，可使120 kGy光子辐照后探测器的响应稳定在±5％之内。该传感器的特征还在于用18 MV医用LINAC进行辐照，其对光中子引起的损伤的敏感性小于0.5％/ 100 Gy。辐射损伤机理已通过TCAD仿真验证，该机理证实了CCE升高背后的机理是累积剂量的函数。

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