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首页> 外文期刊>Nuclear Science, IEEE Transactions on >Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs
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Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs

机译：背栅偏置和工艺条件对MuGFET跨导的γ降解的影响

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摘要

The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without selective epitaxial growth (SEG) and 45$^{circ}$ rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not as strong.
机译：对于不同的背栅电压和不同种类的SOI MuGFET，研究了亚阈值区域中跨导的伽马辐射引起的变化：具有和不具有选择性外延生长（SEG）和45°旋转晶体管的器件。当背栅接地时，宽鳍片器件表现出更大的退化。另一方面，在观察到跨导降低之前，窄鳍晶体管的反向沟道需要反转。带有和不带有SEG的设备的跨导辐射行为相似。结果表明，跨导的最大变化与窄鳍片器件的迁移率相关。当晶体管旋转时，该迁移率变化。对于宽鳍片设备，这种相关性不那么强。

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