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首页> 外文期刊>Nuclear Science, IEEE Transactions on >Fault Modeling and Worst-Case Test Vectors for Leakage Current Failures Induced by Total Dose in ASICs
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Fault Modeling and Worst-Case Test Vectors for Leakage Current Failures Induced by Total Dose in ASICs

机译:ASIC中总剂量引起的漏电流故障的故障建模和最坏情况测试向量

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摘要

We developed a cell-level fault model for leakage current failure of standard-cell ASIC devices exposed to total ionizing dose. This fault model is valid for CMOS process technologies that exhibit field-oxide leakage current under total dose. The fault model was represented using hardware descriptive languages which consequently allowed for cell-level simulation of ASIC devices under total dose using functional simulation tools normally used during the design flow of ASIC devices. However, the identification of worst-case test vectors using those tools using automatic test pattern generation (ATPG) tools targeting the fault model developed. This can lead to prohibitively long search time for WCTV in large ASIC devices. We developed an innovative search method based on genetic algorithms (GA) which made possible the identification of WCTV for large ASIC devices in very short time. Finally, we experimentally validated the significance of WCTV in total dose testing of ASIC devices.
机译:我们针对暴露于总电离剂量下的标准单元ASIC器件的泄漏电流故障开发了单元级故障模型。该故障模型对于在总剂量下表现出场氧化物泄漏电流的CMOS工艺技术有效。故障模型使用硬件描述语言表示,因此可以使用通常在ASIC器件设计流程中使用的功能仿真工具在总剂量下对ASIC器件进行单元级仿真。但是,使用针对故障模型的自动测试模式生成(ATPG)工具使用这些工具识别最坏情况的测试向量。在大型ASIC设备中,这可能导致WCTV的搜索时间过长。我们开发了一种基于遗传算法(GA)的创新搜索方法,该方法可以在很短的时间内识别大型ASIC设备的WCTV。最后,我们通过实验验证了WCTV在ASIC器件的总剂量测试中的重要性。

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