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首页> 外文期刊>IEEE Transactions on Nuclear Science >Long-term annealing of a radiation-hardened 1.0 micron bulk CMOS process
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Long-term annealing of a radiation-hardened 1.0 micron bulk CMOS process

机译：辐射硬化的1.0微米体CMOS工艺的长期退火

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摘要

Data are reported on the degradation of transistor parameters due to a high-dose-rate irradiation (300 rad(Si)/s) followed an anneal cycle. The parametric data were selected to quantify the loss in drive performance as well as leakage due to the parasitic components. Transistors were annealed at 250 degrees C and 100 degrees C. The recovery of the device parametrics for the n-channel transistors did not show a significant rebound problem. The p-channel transistors did show a small recovery, but became stable after approximately 100 h of annealing. The rate of recovery for the n-channel threshold voltage as a function of anneal temperature was modeled. There are two recovery mechanisms that influence the shape of the recovery curve: (1) electron tunneling into the trapped positive charge, which dominates during the first 1000 h and follows a logarithmic relationship with time; and (2) interface state buildup, which becomes the dominant mechanism during the remainder of the anneal cycle and follows a linear relationship with time.
机译：报告了有关在退火周期后由于高剂量率辐照（300 rad（Si）/ s）引起的晶体管参数退化的数据。选择参数数据以量化驱动性能的损失以及由于寄生成分引起的泄漏。晶体管在250摄氏度和100摄氏度下进行退火。n沟道晶体管的器件参数恢复并未显示出明显的回弹问题。 p沟道晶体管确实显示出很小的恢复，但是在退火大约100小时后变得稳定。对n沟道阈值电压的恢复速率作为退火温度的函数进行建模。有两种影响恢复曲线形状的恢复机制：（1）电子隧穿到捕获的正电荷中，该电荷在前1000小时内占主导地位，并随时间呈对数关系； （2）界面状态的建立，它在退火周期的剩余时间内成为主导机制，并与时间呈线性关系。

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