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首页> 外文期刊>IEEE Transactions on Power Electronics >Thermal Management of High-Power Switching Transistors Using Thick CVD-Grown Graphene Nanomaterial
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Thermal Management of High-Power Switching Transistors Using Thick CVD-Grown Graphene Nanomaterial

机译：使用厚CVD生长石墨烯纳米材料的大功率开关晶体管的热管理

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摘要

Graphene is a promising material for thermal management. Heating in power electronics is a severe issue since heat generation can lead to rise in device temperature which can cause performance degradation and device failure. However, current approaches are not so efficient because of the extremely small thermal mass of monolayer or few layers graphene. Here we show a new type of chemical vapor deposition (CVD)-grown thick graphene network with in-plane thermal conductivity of 1100 W/mK on ceramic substrates for thermal management of power switching devices. The demonstration of graphene network's thermal management capabilitieswas carried out on a 10-Oresistor module and a 1.2-kV SiC MOSFET package module. The results show that the thermal management performance using graphene coated on a low cost Al2O3 direct-bonded copper (DBC) is significantly superior to the industry standard, costlier AlN DBC substrates. Specifically, the temperature of hot spots is lower by at least 25 degrees C when using CVD-grown graphene networks for thermal management. Numerical simulations suggest that the high in-plane thermal conductivity of thick graphene networks helps in quick transfer of heat away from the device. These demonstrations represent a transformative change on thermal management of WBG high-power switching devices.
机译：石墨烯是用于热管理的有前途的材料。电力电子中的发热是一个严重的问题，因为发热会导致设备温度升高，从而导致性能下降和设备故障。然而，由于单层或几层石墨烯的热质量极小，当前的方法并不是那么有效。在这里，我们展示了一种新型的化学气相沉积（CVD）生长的厚石墨烯网络，该陶瓷网络在陶瓷基板上的面内导热率为1100 W / mK，可用于功率开关设备的热管理。石墨烯网络的热管理功能演示是在10电阻模块和1.2kV SiC MOSFET封装模块上进行的。结果表明，使用涂在低成本Al2O3直接键合铜（DBC）上的石墨烯的热管理性能明显优于行业标准，更昂贵的AlN DBC基板。具体而言，当使用CVD生长的石墨烯网络进行热管理时，热点的温度至少降低25摄氏度。数值模拟表明，厚石墨烯网络的高面内导热率有助于快速将热量从器件中转移出去。这些演示代表了WBG大功率开关设备的热管理方面的变革。

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