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首页> 外文期刊>Semiconductor Manufacturing, IEEE Transactions on >Four Point Probe Structures With Buried and Surface Electrodes for the Electrical Characterization of Ultrathin Conducting Films
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Four Point Probe Structures With Buried and Surface Electrodes for the Electrical Characterization of Ultrathin Conducting Films

机译:具有埋入式和表面电极的四点探针结构,用于超薄导电膜的电学表征

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摘要

Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This paper includes test structure design and fabrication, and the electrical characterization of atomic layer deposition TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e., conductor-dielectric combination). The proposed structures can be used successfully to characterize sub-10 nm films.
机译:基于其上沉积有超薄膜的电极,提出了用于超薄导电膜电特性测试的测试结构。讨论了两种不同的设计:一种具有埋入电极的新颖设计和一种在表面具有电极的常规设计。本文包括测试结构的设计和制造,以及原子层沉积低至4 nm的TiN膜的电学表征。我们证明了新颖的测试结构可提供与常规结构相同的结果,并且具有材料选择范围更广的优势(即导体-电介质组合)。所提出的结构可以成功地用于表征10 nm以下的薄膜。

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