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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Effect of interfacial and bulk organic contamination on the quality of thin silicon oxide
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Effect of interfacial and bulk organic contamination on the quality of thin silicon oxide

机译：界面和整体有机污染物对薄氧化硅质量的影响

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摘要

The effect of organic contamination of silicon (HF-last cleaned) and silicon dioxide (as-received) wafer surfaces on the quality of gate oxide was studied. Controlled contamination by model organics as well as cleanroom contamination conditions were investigated. Wafers were oxidized under oxidizing or inert ramp-up ambient to grow ultrathin thermal oxides (30 /spl Aring/). Surface and electrical characterization of the oxides was done by Auger sputter profiling, tunneling atomic force microscopy (TAFM) and gate oxide integrity (GOI) measurements. For oxides grown in an inert ambient during ramp-up, HF-last cleaned wafers had a large number of carbon-based defects as compared to as-received wafers. Oxygen in the ramp-up ambient oxidized and volatilized organics resulting in good quality thin gate oxides for HF-last cleaned wafers. However, for as-received wafers, the defect density was increased in an oxidizing ramp-up ambient. A probable mechanism for degradation of the gate oxide quality on HF-last wafers in an inert ramp-up ambient is investigated.
机译：研究了硅（最后清洗过的HF）和二氧化硅（按原样）晶片表面的有机污染对栅氧化层质量的影响。研究了由模型有机物控制的污染以及洁净室的污染条件。晶片在氧化或惰性升温条件下被氧化，以生长超薄热氧化物（30 / spl Aring /）。通过俄歇溅射分析，隧道原子力显微镜（TAFM）和栅极氧化物完整性（GOI）测量来完成氧化物的表面和电学表征。对于在惰性条件下在惰性环境中生长的氧化物，与最初接收的晶片相比，最后经过HF清洗的晶片具有大量的碳基缺陷。周围环境中氧化和挥发的有机物中的氧气产生了用于HF清洗后的晶片的高质量薄栅极氧化物。然而，对于原样的晶片，在氧化上升的环境中缺陷密度增加。研究了在惰性升温环境中降低HF-last晶片上栅极氧化物质量的可能机制。

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