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Mismatch in diffusion resistors caused by photolithography

机译:光刻造成的扩散电阻不匹配

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摘要

During the qualification of a 0.35-/spl mu/m CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Various experiments showed that the mismatch was caused by spinning the wafer during the resist development process. Changing this process eliminated the systematic diffusion resistor mismatch.
机译:在0.35 / spl mu / m CMOS工艺的鉴定过程中,观察到扩散电阻显示出系统性的不匹配,具体取决于晶片上的位置。从晶片中心到外部区域的失配增加。各种实验表明,不匹配是由于在抗蚀剂显影过程中旋转晶圆而引起的。更改此过程可消除系统的扩散电阻器不匹配。

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