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High $k_{t}^{2}$ Exceeding 6.4% Through Metal Frames in Aluminum Nitride 2-D Mode Resonators

机译: $ k_ {t} ^ {2} $ 在氮化铝2-D中,金属框架中的6.4%以上模式谐振器

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摘要

This work describes a new method to enhance the electromechanical coupling coefficient (k(t)(2)) of 2-D mode resonators (2DMRs). This approach exploits the multimodal excitation of different Lamb waves to achieve a quasi-uniform vertical displacement distribution in the electrode regions of 2DMRs. To do so, the 2DMRs reported in this work rely on the use of metal frame structures placed at the edges of each metal strip forming the electrode gratings. To demonstrate the effectiveness of this new technique in enhancing k(t)(2), we report the design and simulated performance through the finite-element methods of a 2.5-GHz 2DMR using metal frames. Our analysis proves that this device can simultaneously exhibit high k(t)(2) in excess of 6.4% and wide lithographic frequency tunability in excess of 10%, thus approaching the reported performance of aluminum nitride (AlN) film bulk acoustic resonators (FBARs) operating within the same frequency range.
机译:这项工作描述了一种新的方法来提高二维模式谐振器(2DMR)的机电耦合系数(k(t)(2))。该方法利用了不同兰姆波的多峰激发,以在2DMR的电极区域中实现准均匀的垂直位移分布。为此,这项工作中报道的2DMR依赖于放置在形成电极光栅的每个金属条的边缘的金属框架结构的使用。为了证明这种新技术增强k(t)(2)的有效性,我们报告了使用金属框架的2.5 GHz 2DMR有限元方法的设计和仿真性能。我们的分析证明,该器件可同时显示出超过6.4%的高k(t)(2)和超过10%的宽光刻频率可调性,从而接近了报道的氮化铝(AlN)薄膜体声谐振器(FBAR)的性能。 )在相同的频率范围内运行。

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