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Biasing of Capacitive Micromachined Ultrasonic Transducers

机译:电容式微机械超声换能器的偏置

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Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (<5 μV ) HV generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm2) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.
机译:电容式微加工超声换能器(CMUT)是医疗超声成像应用中压电换能器的有效替代品。它们是使用硅微加工技术制造的微机电设备,在过去的二十年中在许多实验室中得到了发展。对这种新型换能器技术的兴趣在于它与标准集成电路技术的完全兼容性,这使得将换能器和电子设备集成在同一芯片上成为可能,从而实现了极低成本和高性能的设备,包括两者一维或二维阵列。作为电容式传感器,CMUT需要高偏置电压才能在脉冲回波成像应用中正确运行。高质量高压(HV)发生器的典型偏置电源残留纹波在毫伏范围内,与接收到的回波信号的幅度相当,尤其难以最小化。本文的目的是分析经典的CMUT偏置电路,突出每个电路的特性,并提出两种针对CMUT偏置应用而优化的新型HV发生器架构。提出的第一个电路是超低残留纹波(<5μV)HV发生器,它使用极其稳定的正弦功率振荡器拓扑。第二电路采用可商购的集成升压转换器,其特征在于特别有效的开关拓扑。该电路用于通过与脉冲序列同步地对缓冲电容器充电来偏置CMUT,从而减少了开关噪声对接收回波信号的影响。电路的小面积(约1.5 cm2)使得可以在探头内部产生非常接近CMUT的偏置电压,从而使所提出的解决方案对便携式应用具有吸引力。显示的测量和实验证明了所提出的新方法的有效性。

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