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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >A Comparative Analysis of CMUT Receiving Architectures for the Design Optimization of Integrated Transceiver Front Ends
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A Comparative Analysis of CMUT Receiving Architectures for the Design Optimization of Integrated Transceiver Front Ends

机译：集成收发器前端设计优化中CMUT接收架构的比较分析

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摘要

A formal comparison between fundamental RX amplifier configurations for capacitive micromachined ultrasonic transducers (CMUTs) is proposed in this paper. The impact on both RX and the pulse-echo frequency response and on the output SNR is thoroughly analyzed and discussed. It is shown that the resistive-feedback amplifier yields a bandpass RX frequency response, while both open-loop voltage and capacitive-feedback amplifiers exhibit a low-pass frequency response. For a given power dissipation, it is formally proved that a capacitive-feedback amplifier provides a remarkable SNR improvement against the commonly adopted resistive feedback stage, achieved at the expense of a reduced pulse-echo center frequency, making its use convenient in low-frequency and midfrequency ultrasound imaging applications. The advantage mostly comes from a much lower noise contributed by the active devices, especially with lowQ, broadband transducers. The results of the analysis are applied to the design of a CMUT front end in BIPOLAR-CMOSDMOS Silicon-on-Insulator technology operating at 10-MHz center frequency. It comprises a low-power RX amplifier, a highvoltage Transmission/Reception switch, and a 100-V TX driver. Extensive electrical characterization, pulse-echo measurements, and imaging results are shown. Compared with previously reported CMUT front ends, this transceiver demonstrates the highest dynamic range and state-of-the-art noise performance with an RX amplifier power dissipation of 1 mW.
机译：本文提出了电容微机械超声换能器（CMUT）的基本RX放大器配置之间的形式比较。全面分析和讨论了对RX和脉冲回波频率响应以及对输出SNR的影响。结果表明，电阻反馈放大器产生带通RX频率响应，而开环电压放大器和电容反馈放大器均表现出低通频率响应。对于给定的功耗，已正式证明电容反馈放大器相对于通常采用的电阻反馈级具有显着的SNR改善，这是以降低脉冲回波中心频率为代价而实现的，从而使其在低频中使用方便和中频超声成像应用。优势主要来自有源设备产生的低得多的噪声，尤其是对于低Q宽带传感器而言。分析结果被应用到以10MHz中心频率工作的BIPOLAR-CMOSDMOS绝缘体上硅技术的CMUT前端设计中。它包括一个低功率RX放大器，一个高压发送/接收开关和一个100V TX驱动器。显示了广泛的电气特性，脉冲回波测量和成像结果。与以前报道的CMUT前端相比，该收发器具有最高的动态范围和最新的噪声性能，RX放大器的功耗为1 mW。

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