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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Ultralow-phase-noise oscillators based on BAW resonators
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Ultralow-phase-noise oscillators based on BAW resonators

机译：基于BAW谐振器的超低相位噪声振荡器

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This paper presents two 2.1-GHz low-phase noise oscillators based on BAW resonators. Both a single-ended common base structure and a differential Colpitts structure have been implemented in a 0.25-;C;m BiCMOS process. The detailed design methods including the realization, optimization, and test are reported. The differential Colpitts structure exhibits a phase noise 6.5 dB lower than the single-ended structure because of its good performance of power noise immunity. Comparison between the two structures is also carried out. The differential Colpitts structure shows a phase noise level of -87 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -162 dBc/Hz, with an output power close to -6.5 dBm and a core consumption of 21.6 mW. Furthermore, with the proposed optimization methods, both proposed devices have achieved promising phase noise performance compared with state-of-the-art oscillators described in the literature. Finally, we briefly present the application of the proposed BAW oscillator to a micro-atomic clock.
机译：本文介绍了两个基于BAW谐振器的2.1 GHz低相位噪声振荡器。单端公共基极结构和差分Colpitts结构均已在0.25-; C; m BiCMOS工艺中实现。报告了详细的设计方法，包括实现，优化和测试。差分Colpitts结构由于具有良好的抗电源噪声性能，因此其相位噪声比单端结构低6.5 dB。还进行了两种结构的比较。差分Colpitts结构在1kHz偏移频率下显示-87 dBc / Hz的相位噪声水平，在-162 dBc / Hz的本底噪声，输出功率接近-6.5 dBm，核心功耗为21.6 mW。此外，与文献中描述的现有技术的振荡器相比，利用所提出的优化方法，两个所提出的装置都实现了有希望的相位噪声性能。最后，我们简要介绍了拟议的BAW振荡器在微原子钟中的应用。

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