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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >A low-phase-noise ka-band push-push voltage-controlled oscillator using CMOS/ glass-integrated passive device technologies
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A low-phase-noise ka-band push-push voltage-controlled oscillator using CMOS/ glass-integrated passive device technologies

机译：利用CMOS /玻璃集成无源器件技术的低相位噪声ka波段推挽压控振荡器

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摘要

In this paper, a Ka-band CMOS push-push voltage- controlled oscillator (VCO) integrated into a glass-integrated passive device (GIPD) process is presented. The transformer, ;B;/4 transmission line, and inductors of the VCO are realized in the GIPD process, achieving superior performances, and therefore improve the phase noise of the VCO. Moreover, the transformer-based VCO is a differential Hartley topology to further reduce the phase noise and chip area. Operating at 1.8 V supply voltage, the VCO core consumes merely 3.8 mW of dc power. The measured phase noise is -109.18 dBc/Hz at 1 MHz offset from the 30.84 GHz oscillation frequency. The push-push VCO also demonstrates a 24.5 dB fundamental rejection, and exhibits an 8.4% tuning range. Compared with recently published CMOS-based VCOs, it is observed that the proposed VCO exhibits excellent performance under low power consumption.
机译：本文提出了一种集成到玻璃集成无源器件（GIPD）工艺中的Ka波段CMOS推压压控振荡器（VCO）。 VCO的变压器，; B; / 4传输线和电感器是通过GIPD工艺实现的，具有出色的性能，因此可以改善VCO的相位噪声。此外，基于变压器的VCO是差分Hartley拓扑，可进一步减小相位噪声和芯片面积。 VCO内核在1.8 V电源电压下工作，仅消耗3.8 mW的直流电源。从30.84 GHz振荡频率偏移1 MHz时，测得的相位噪声为-109.18 dBc / Hz。推压式VCO还具有24.5 dB的基本抑制性能，并具有8.4％的调谐范围。与最近发布的基于CMOS的VCO相比，可以看出该VCO在低功耗下表现出出色的性能。

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