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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >High-K (Ba0.8Bi0.2)(Zn0.1Ti0.9)O3 ceramics for high-temperature capacitor applications
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High-K (Ba0.8Bi0.2)(Zn0.1Ti0.9)O3 ceramics for high-temperature capacitor applications

机译：用于高温电容器应用的高K（Ba0.8Bi0.2）（Zn0.1Ti0.9）O3陶瓷

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摘要

Solid solutions of BaTiO3-Bi(Zn1/2Ti1/2)O3 were investigated for high-temperature capacitor applications. Compositions close to 0.8BaTiO3-0.2Bi(Zn1/2Ti1/2)O3 revealed pseudo-cubic symmetry and showed a linear dielectric response. The existence of a nearly flat temperature dependence of the relative permittivity over the temperature range of 100 to 350u000b0;C was also obtained. In this study, the effects of cation non-stoichiometry and doping were investigated in an attempt to optimize the insulation resistance for high-temperature applications. The dielectric response of (Ba0.8-xBi0.2)(Zn0.1Ti0.9) O3 ceramics where 0 ʧD; X ʧD;0.08, as well as ZrO2- and Mn2O3- doped ceramics were studied. The optimum compositions exhibited a relative permittivity in excess of 1150 with a low loss tangent (tan ;4; TK) and the RC time constant were also investigated.
机译：研究了用于高温电容器应用的BaTiO3-Bi（Zn1 / 2Ti1 / 2）O3的固溶体。接近0.8BaTiO3-0.2Bi（Zn1 / 2Ti1 / 2）O3的成分显示出伪立方对称性，并显示出线性介电响应。在100至350u000b0; C的温度范围内，相对介电常数的温度依赖性也几乎保持不变。在这项研究中，研究了阳离子非化学计量和掺杂的影响，以试图优化高温应用的绝缘电阻。 （Ba0.8-xBi0.2）（Zn0.1Ti0.9）O3陶瓷的介电响应，其中0ʧD； XʧD; 0.08以及ZrO2-和Mn2O3-掺杂的陶瓷都得到了研究。最佳组合物的相对介电常数超过1150，损耗角正切（tan; 4; TK）低，并且研究了RC时间常数。

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