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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >Nonlinear dielectric response of AgNb1-xTaxO3 in the vicinity of diffuse phase transitions
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Nonlinear dielectric response of AgNb1-xTaxO3 in the vicinity of diffuse phase transitions

机译：AgNb1-xTaxO3在扩散相变附近的非线性介电响应

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摘要

Linear and nonlinear dielectric studies of AgNb1-xTaxO3 (ATN) ceramics (x ʧD; 0.6) were carried out in the temperature range of 80 to 673K. The temperature dependences of third-order nonlinear electric susceptibility X3''(T) exhibit two distinct maxima: at the temperature of the weak ferroelectric phase appearance, M1-M2 transition, and at the temperature of the Nb/Ta ion dynamics freezing, Tf. For AgNbO3, they appear at 325K and 448K, respectively. With increasing Ta concentration, both maxima shift toward lower temperature: 4K/%Ta (M1-M2) and 5.6K/%Ta (Tf). The X3'' (T) maxima indicate changes of the Nb/Ta ion dynamics and their contribution to electric susceptibility. At Tf, a partial freezing of the Nb/Ta ion displacements to the disordered antipolar, antiferroelectric array takes place. At the M1-M2 transition, further freezing of Nb/Ta displacements to polar weak relaxor ferroelectric or dipolar glass transition occurs. This polar state coexists with the ground antiferroelectric state. Studies of the aging process showed that below Tf the aging influence on electric susceptibility is substantial, whereas above Tf it may be neglected. This means that for ATN ceramics in the concentration range used for applications, there is no aging process in the room temperature region, which is an additional advantage of this system.
机译：在80至673K的温度范围内，对AgNb1-xTaxO3（ATN）陶瓷（xʧD; 0.6）进行了线性和非线性介电研究。三阶非线性电化率X3''（T）的温度依赖性表现出两个截然不同的最大值：在弱铁电相出现的温度下，M1-M2转变，在Nb / Ta离子动力学冻结的温度下，Tf 。对于AgNbO3，它们分别出现在325K和448K。随着Ta浓度的增加，两个最大值都向较低温度移动：4K /％Ta（M1-M2）和5.6K /％Ta（Tf）。 X3''（T）最大值表示Nb / Ta离子动力学的变化及其对电化率的贡献。在Tf时，Nb / Ta离子位移向无序的反极性，反铁电阵列发生了部分冻结。在M1-M2跃迁中，Nb / Ta位移进一步冻结为极性弱弛豫铁电或偶极玻璃跃迁。该极性状态与反铁电状态共存。对时效过程的研究表明，低于Tf时，老化对电化率的影响很大，而高于Tf时则可以忽略。这意味着对于在应用中使用的浓度范围内的ATN陶瓷，在室温范围内没有老化过程，这是该系统的另一个优势。

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