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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >In situ investigation of thermally influenced phase transformations in (pb0.92sr0.08) (zr0.65ti0.35)o3 thin films using micro-raman spectroscopy and x-ray diffraction
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In situ investigation of thermally influenced phase transformations in (pb0.92sr0.08) (zr0.65ti0.35)o3 thin films using micro-raman spectroscopy and x-ray diffraction

机译：利用微拉曼光谱和X射线衍射原位研究（pb0.92sr0.08）（zr0.65ti0.35）o3薄膜中受热影响的相变

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摘要

Thin films of ferroelectric strontium-doped lead zirconate titanate [PSZT, (Pb0.92Sr0.08)(Zr0.65Ti0.35)O3] deposited by RF magnetron sputtering have been analyzed by in situ analysis techniques. The in situ techniques employed for this study include micro-Raman spectroscopy and X-ray diffraction (XRD), and variations in thin film structure and orientations for temperatures up to 350°C and 750°C for the respective techniques have been studied. The samples analyzed were PSZT thin films deposited on platinum-coated silicon substrates at either room temperature or at 750°C. In situ measurements using micro-Raman spectroscopy and XRD techniques have been used to identify the Curie point for poly-crystalline PSZT thin films and to determine the temperature-activating significant grain growth for room-temperature-deposited PSZT thin films. To study the presence of hysteresis, analysis was carried out during both temperature ramp-up and ramp-down cycles. Raman measurements showed expected bands (albeit weak), and the in situ measurements have detected variations in the crystal structure of the thin film samples, with negligible variations between the heating and cooling cycles. A combination of the Raman and XRD results has shown that the temperatureactivating significant grain growth for the room-temperaturedeposited films is about 275°C and the Curie point lies between 325 and 400°C. This relatively high Curie point makes these films suitable for wide temperature range applications.
机译：用原位分析技术分析了铁电锶掺杂钛酸锆钛酸铅[PSZT，（Pb0.92Sr0.08）（Zr0.65Ti0.35）O3]的薄膜。用于这项研究的原位技术包括显微拉曼光谱法和X射线衍射（XRD），并且对膜层结构和取向在350°C和750°C的温度下的变化进行了研究。分析的样品是在室温或在750°C沉积在镀铂硅衬底上的PSZT薄膜。使用微拉曼光谱和XRD技术进行的原位测量已被用于识别多晶PSZT薄膜的居里点，并确定了室温沉积的PSZT薄膜的温度激活性晶粒长大。为了研究磁滞的存在，在温度上升和下降周期中都进行了分析。拉曼测量显示出预期的谱带（尽管较弱），并且原位测量已检测到薄膜样品晶体结构的变化，而加热和冷却循环之间的变化可忽略不计。拉曼和XRD结果的组合表明，室温沉积薄膜的温度激活明显的晶粒长大约为275°C，居里点位于325至400°C之间。相对较高的居里点使这些薄膜适用于宽温度范围的应用。

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