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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Preparation of (001)-oriented Pb(Zr,Ti)O3 thin films and their piezoelectric applications
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Preparation of (001)-oriented Pb(Zr,Ti)O3 thin films and their piezoelectric applications

机译：（001）取向的Pb（Zr，Ti）O3薄膜的制备及其压电应用

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摘要

Preparation of (001)-oriented Pb(Zr,Ti)O3 (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001)-oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d31, of -100 pm/V, and an extremely low relative dielectric constant, epsivr, of 240. The PZT thin films on Si substrate had a very high d31 of -150 pm/V and an epsivr = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.
机译：研究了（001）取向的Pb（Zr，Ti）O3（PZT）薄膜的制备及其在传感器和致动器中的应用。通过RF磁控溅射在（100）MgO单晶衬底上外延生长具有接近晶相相边界组成的这些薄膜。这些（001）取向的PZT薄膜可以通过引入（100）取向的MgO缓冲层在各种基板上获得，例如玻璃和硅。另外，通过优化溅射条件，可以在没有缓冲层的Si衬底上获得（001）取向的PZT薄膜。所有这些薄膜均显示出优异的压电性能，无需极化处理。 MgO衬底上的PZT薄膜的d31高压电系数为-100 pm / V，相对介电常数epsivr极低，为240。Si衬底上的PZT薄膜的d31非常高- 150 pm / V和epsivr =700。将这些PZT薄膜应用于汽车导航系统中带有音叉的角速度传感器，以及用于定位高密度硬盘驱动器磁头的双级致动器。以及用于工业按需打印机的喷墨打印头致动器。

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