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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Nonlinear effects in varactor-tuned resonators
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Nonlinear effects in varactor-tuned resonators

机译：变容二极管谐振器中的非线性效应

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摘要

This paper describes the effects of RF power level on the performance of varactor-tuned resonator circuits. A variety of topologies are considered, including series and parallel resonators operating in both unbalanced and balanced modes. As these resonators were designed to produce oscillators with minimum phase noise, the initial small signal insertion loss was set to 6 dB and, hence, Q/sub L//Q/sub 0/ = 1/2. To enable accurate analysis and simulation, S parameter and PSPICE models for the varactors were optimized and developed. It is shown that these resonators start to demonstrate nonlinear operation at very low power levels demonstrating saturation and lowering of the resonant frequency. On occasion squegging is observed for modified bias conditions. The nonlinear effects are dependent on the unloaded Q (Q/sub 0/), the ratio of loaded to unloaded Q (Q/sub L//Q/sub 0/), the bias voltage, and circuit configurations with typical nonlinear effects occurring at -8 dBm in a circuit with a loaded Q of 63 and a varactor bias voltage of 3 V. Analysis, simulation, and measurements that show close correlation are presented.
机译：本文描述了射频功率水平对变容二极管调谐谐振器电路性能的影响。考虑了多种拓扑，包括以不平衡和平衡模式工作的串联和并联谐振器。由于这些谐振器设计为产生具有最小相位噪声的振荡器，因此初始的小信号插入损耗设置为6 dB，因此Q / sub L // Q / sub 0 / = 1/2。为了进行准确的分析和仿真，优化和开发了变容二极管的S参数和PSPICE模型。结果表明，这些谐振器开始在非常低的功率水平上表现出非线性工作，这表明了饱和和谐振频率的降低。有时会在变形的偏置条件下观察到蠕变。非线性效应取决于空载Q（Q / sub 0 /），空载Q与空载Q的比率（Q / sub L // Q / sub 0 /），偏置电压以及发生典型非线性效应的电路配置在负载Q为63且变容二极管偏置电压为3 V的电路中，功率为-8 dBm时，将显示出密切相关的分析，仿真和测量结果。

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