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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Comparison of conventional and collapsed region operation of capacitive micromachined ultrasonic transducers
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Comparison of conventional and collapsed region operation of capacitive micromachined ultrasonic transducers

机译：电容式微加工超声换能器常规操作和收缩操作的比较

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摘要

We report experimental results from a comparative study on collapsed region and conventional region operation of capacitive micromachined ultrasonic transducers (CMUTs) fabricated with a wafer bonding technique. Using ultrasonic pulse-echo and pitch-catch measurements, we characterized single elements of 1-D CMUT arrays operating in oil. The experimental results from this study agreed with the simulation results: a CMUT operating in the collapsed region produced a higher maximum output pressure than a CMUT operated in the conventional region at 90% of its collapse voltage (3 kPa/V vs. 16.1 kPa/V at 2.3 MHz). While the pulse-echo fractional bandwidth (126%) was higher in the collapsed region operation than in the conventional operation (117%), the pulse-echo amplitude in collapsed region operation was 11 dB higher than in conventional region operation. Furthermore, within the range of tested bias voltages, the output pressure monotonously increased with increased bias during collapsed region operation. It was also found that in the conventional mode, short AC pulses (larger than the collapse voltage) could be applied without collapsing the membranes. Finally, while no significant difference was observed in reflectivity of the CMUT face between the two regions of operation, hysteretic behavior of the devices was identified in the collapsed region operation
机译：我们从比较研究的结果中报告了实验结果，该研究是通过晶圆键合技术制造的电容式微加工超声换能器（CMUT）的塌陷区域和常规区域操作的。使用超声脉冲回波和音高捕获测量，我们表征了在油中工作的一维CMUT阵列的单个元素。这项研究的实验结果与仿真结果相符：在塌陷区域工作的CMUT在其塌陷电压的90％时产生的最大输出压力比在常规区域工作的CMUT更高（3 kPa / V对16.1 kPa / V在2.3 MHz下）。收缩区域操作中的脉冲回波分数带宽（126％）比常规操作中的脉冲回波分数带宽（117％）高，而收缩区域操作中的脉冲回波幅度比常规区域操作中的脉冲回声幅度高11 dB。此外，在测试的偏置电压范围内，在崩溃区域操作期间，输出压力随着偏置的增加而单调增加。还发现在常规模式下，可以施加短的AC脉冲（大于塌陷电压）而不塌陷膜。最后，虽然在两个操作区域之间未观察到CMUT面的反射率有显着差异，但在塌陷区域操作中发现了器件的磁滞行为

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