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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films
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Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films

机译：机电耦合对c织构AlN薄膜取向度的依赖性

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Highly c-oriented thin aluminum nitride (AlN) films have been grown at room temperature with reactive sputter deposition. Membrane film bulk (FBAR) thickness excited resonators have been subsequently fabricated by bulk micro machining of silicon (Si). The resonators were then electrically characterized with a network analyzer in a one-port configuration. Subsequently, the coupling coefficients and the Q factors of both the longitudinal and the shear mode were extracted from fitting the measured admittance with that of the equivalent circuit model at the resonance frequencies. The goal of this work is to study the variation of the electromechanical coupling and the quality factor of the resonators, for both the longitudinal and the shear modes as a function of the degree of film texture. It is observed that the films exhibit a mean tilt of the c-axis relative the surface normal. This tilt is found to depend on both the film texture and the distance from the wafer radius. It is also demonstrated that the textured films exhibit a behavior of the electromechanical coupling effectively identical to that of a single crystalline material of equivalent tilt. Thus, it is shown that the electromechanical coupling for the longitudinal mode decreases from 8% to 4%, and that for the shear mode increases from 0% up to 3% by varying the full width half maximum (FWHM) of the [002] rocking curve in the interval from 2° to 10°.
机译：高度c取向的薄氮化铝（AlN）膜已在室温下通过反应性溅射沉积法生长。随后，通过对硅（Si）进行批量微加工，制造了膜膜体（FBAR）厚度激励谐振器。然后用一个单端口配置的网络分析仪对谐振器进行电气特性分析。随后，通过在谐振频率下将测得的导纳与等效电路模型的导纳进行拟合，来提取纵向和剪切模态的耦合系数和Q因子。这项工作的目的是研究纵向和剪切模式下的机电耦合的变化和谐振器的品质因数，该变化是薄膜织构程度的函数。观察到膜表现出相对于表面法线的c轴平均倾斜。发现这种倾斜取决于膜的质地和与晶片半径的距离。还表明，纹理化膜表现出与等效倾角的单晶材料有效地相同的机电耦合行为。因此，通过改变[002]的半峰全宽（FWHM），可以看出纵向模式的机电耦合从8％降低到4％，而剪切模式的机电耦合从0％升高到3％。在2°到10°间隔内的摇摆曲线。

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