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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Low temperature fabrication of immersion capacitive micromachined ultrasonic transducers on silicon and dielectric substrates
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Low temperature fabrication of immersion capacitive micromachined ultrasonic transducers on silicon and dielectric substrates

机译：在硅和电介质基板上低温制造浸入式电容微加工超声换能器

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摘要

A maximum processing temperature of 250°C is used to fabricate capacitive micromachined ultrasonic transducers (CMUTs) on silicon and quartz substrates for immersion applications. Fabrication on silicon provides a means for electronics integration via post-complementary metal oxide semiconductor (CMOS) processing without sacrificing device performance. Fabrication on quartz reduces parasitic capacitance and allows the use of optical displacement detection methods for CMUTs. The simple, low-temperature process uses metals both as the sacrificial layer for improved dimensional control, and as the bottom electrode for good electrical conductivity and optical reflectivity. This, combined with local sealing of the vacuum cavity by plasma-enhanced chemical-vapor deposition of silicon nitride, provides excellent control of lateral and vertical dimensions of the CMUTs for optimal device performance. In this paper, the fabrication process is described in detail, including process recipes and material characterization results. The CMUTs fabricated for intravascular ultrasound (IVUS) imaging in the 10-20 MHz range and interdigital CMUTs for microfluidic applications in the 5-20 MHz range are presented as device examples. Intra-array and wafer-to-wafer process uniformity is evaluated via electrical impedance measurements on 64-element ring annular IVUS imaging arrays fabricated on silicon and quartz wafers. The resonance frequency in air and collapse voltage variations are measured to be within 1% and 5%, respectively, for both cases. Acoustic pressure and pulse echo measurements also have been performed on 128 Μm×32 Μm IVUS array elements in water, which reveal a performance suitable for forward-looking IVUS imaging at about 16 MHz.
机译：最高处理温度为250°C，用于在硅和石英基板上制造用于浸没应用的电容式微加工超声换能器（CMUT）。在硅上制造提供了一种通过后互补金属氧化物半导体（CMOS）处理进行电子集成的方法，而不会牺牲器件性能。在石英上制造可减少寄生电容，并允许对CMUT使用光学位移检测方法。简单的低温工艺使用金属作为牺牲层以改善尺寸控制，并使用金属作为底部电极以获得良好的导电性和光反射率。这与通过氮化硅的等离子增强化学气相沉积对真空腔进行局部密封相结合，可出色地控制CMUT的横向和纵向尺寸，以实现最佳的器件性能。在本文中，详细描述了制造工艺，包括工艺配方和材料表征结果。作为设备示例，介绍了为10-20 MHz范围内的血管内超声（IVUS）成像而制造的CMUT和用于5-20 MHz范围内的微流体应用的叉指式CMUT。通过在硅和石英晶片上制造的64元素环形环形IVUS成像阵列上的电阻抗测量，评估阵列内和晶片间工艺的均匀性。在两种情况下，空气中的共振频率和崩溃电压的变化分别被测量在1％和5％之内。还在水中的128 Mm×32 Mm IVUS阵列元件上进行了声压和脉冲回波测量，揭示了适合于约16 MHz的前瞻性IVUS成像的性能。

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