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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Piezoelectric photoacoustic evaluation of Si wafers with buried structures
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Piezoelectric photoacoustic evaluation of Si wafers with buried structures

机译：具有埋入结构的硅晶片的压电光声评估

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摘要

The piezoelectric photoacoustic evaluation of Si wafers with buried structures is studied experimentally and theoretically. In the experiment, the authors have detected and imaged the Sb-doped regions in a Si wafer covered by an epitaxial Si layer with about 10- mu m thickness. In order to explain the experimental results, the one-dimensional multilayered model with discontinuous thermal impedance between the neighboring layers is used, and the expressions for the thermal and acoustic fields in the sample and PZT transducer are also presented. Moreover, numerical calculations in accordance with the practical experimental conditions have been carried out.
机译：通过实验和理论研究了具有掩埋结构的硅片的压电光声评估。在实验中，作者已经检测到并成像了被厚度约10微米的外延硅层覆盖的硅晶片中的掺锑区域。为了解释实验结果，使用了在相邻层之间具有不连续热阻的一维多层模型，并给出了样品和PZT换能器中热场和声场的表达式。而且，已经根据实际实验条件进行了数值计算。

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