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High Q metal strip SSBW resonators using a SAW design

机译:采用SAW设计的高Q金属带SSBW谐振器

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An experimental study of metal strip surface skimming bulk wave (SSBW) resonators using a surface acoustic wave (SAW) design is presented. Characteristics of SSBW and SAW resonators fabricated with the same photolithographic mask are compared and discussed. High Q low-loss SSBW resonators are achieved using a conventional two-port SAW resonator design and taking special care of the distance L between both interdigital transducers, the metal thickness h/ lambda ( lambda =acoustic wavelength) and the finger-to-gap ratio. Best overall performance of the SSBW devices in this study is achieved at L=n lambda /2- lambda /4 (compared with L=n lambda /2- lambda /8 for SAW resonators), h/ lambda =1.6% (compared with 2% for SAW), and finger-to-gap ratio close to 1. The best device fabricated shows an unloaded Q of 5820 and an insertion loss of 7.8 dB at 766 MHz. The SSBW resonant frequency shows a stronger dependence on the metal thickness than the SAW one. This problem, however, is readily solved by frequency trimming using a CF/sub 4/ plasma etching technique. SSBW resonator can be trimmed by 0.2% down in frequency (compared with 0.05% for SAW) without affecting their performance.
机译:提出了使用表面声波(SAW)设计的金属带材表面撇除体波(SSBW)谐振器的实验研究。比较和讨论了用相同的光刻掩模制造的SSBW和SAW谐振器的特性。高Q低损耗SSBW谐振器是使用常规的两端口SAW谐振器设计实现的,并特别注意两个叉指式换能器之间的距离L,金属厚度h /λ(λ=声波波长)和指缝隙比。在这项研究中,SSBW器件的最佳总体性能达到L = nλ/ 2-λ/ 4(与SAW谐振器的L = nλ/ 2-λ/ 8相比),h /λ= 1.6%(与SAW为2%,且指隙比接近1。制造的最佳器件在766 MHz下的空载Q为5820,插入损耗为7.8 dB。 SSBW谐振频率显示出比SAW更高的对金属厚度的依赖性。但是,通过使用CF / sub 4 /等离子蚀刻技术进行频率修整,可以轻松解决此问题。 SSBW谐振器的频率可以降低0.2%(SAW则为0.05%),而不会影响其性能。

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