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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Comparison of Si3N4–SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects
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Comparison of Si3N4–SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects

机译：Si3N4-SiO2和SiO2绝缘层对零偏压CMUT操作的比较使用介质充电效应

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摘要

In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CMUT implementation is that the charge is injected by the dielectric charging effects in an insulation layer in the pull-in state. The CMUT was fabricated by a local oxidation of silicon (LOCOS) process, and the insulation layer consists of Si-3 N-4 -SiO2 and SiO2, which have been commonly used in previous studies. A study on the charging effects is reported to quantitatively observe the voltage shift by charge transfer with time dependence at different temperatures and collapsing time dependence. Therefore, we successfully implemented a zero-bias CMUT with a transmission efficiency of 4.62 kPa/V at a center frequency of 7.53 MHz in Si-3 N-4-SiO2 and a transmission efficiency of 6.78 kPa/V at a center frequency of 7.86 MHz in SiO2 immersion.
机译：在这封信中，考虑到传输和接收灵敏度和AC浸没时，考虑到各方面的零偏置电容微机械超声换能器（CMUT）的特性。零偏置CMUT实现的主要思想是电荷通过拉出状态中的绝缘层中的介质充电效应来注入电荷。 CMUT通过硅（LOCOS）工艺的局部氧化而制造，绝缘层由Si-3 N-4 -4 -SiO 2和SiO 2组成，其通常在先前的研究中使用。据报道，对充电效果的研究是通过在不同温度下的时间依赖性和折叠时间依赖性的时间依赖来定量地观察电压转移。因此，我们在Si-3 N-4-SiO 2中以7.53MHz的中心频率成功地实现了零偏置CMUT，其中心频率为7.53MHz，并以7.86的中心频率为6.78kPa / v的传输效率MHz IN SIO2浸没。

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