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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Origin of the Large Field-Induced Strain and Enhanced Energy Storage Response of Rare-Earth-Doped Lead-Free 0.854BNT–0.12BKT–0.026BT Ceramics
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Origin of the Large Field-Induced Strain and Enhanced Energy Storage Response of Rare-Earth-Doped Lead-Free 0.854BNT–0.12BKT–0.026BT Ceramics

机译：大型场诱导的应变的起源和增强的稀土无铅0.854bnt-0.12bkt-0.026bt陶瓷的储存响应

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摘要

In this study, effects of rare-earth elements such as Nd, Gd, and Ce on the structural and electrical properties of lead-free bismuth sodium potassium barium titanate Bi0.487Na0.427K0.06Ba0.026TiO3 (0.854BNT-0.12BKT-0.026BT) (BNKBT) ceramics have been investigated in detail. Solid-state reaction method was used to prepare undoped, 1.0 mol% Nd, 1.0 mol% Gd, 1.0 mol%, 2.1 mol%, and 2.7 mol% Ce-doped BNKBT ceramic powder compositions. A pure single perovskite structure was observed in the X-ray diffraction (XRD) patterns for all the BNKBT ceramic systems, although doping was found to cause changes in peak splitting and peak positions due to their site preference. The Curie temperatures have not shifted significantly with doping, but the relative permittivity values were found to have increased. The nonergodic normal ferroelectric character of undoped BNKBT ceramic switched to an ergodic relaxor character at room temperature with Nd, Gd, and Ce doping with pinched polarization vs electric field hysteresis loops. Increased field-induced strain levels were observed in the doped BNKBT ceramics with 1 mole% Ce doping yielding a giant field-induced strain of 0.38% under an E-field of 65 kV/cm. Nd-doping, on the other hand, resulted in the highest releasable energy density of 0.64 J/cm(3) at 65 kV/cm. Consequently, the rare-earth-doped BNKBT ceramics were found to be promising for both digital actuator and high-energy-density capacitor applications due to their favorable electrical properties.
机译：在该研究中，稀土元素如Nd，Gd和Ce的影响钛酸铅钛酸钠钾碳酸钠的结构和电学性能.487NA0.427K0.06BA0.026TiO3（0.854bnt-0.12bkt-0.026已经详细研究了BT）（BNKBT）陶瓷。使用固态反应法制备未掺杂，1.0mol％Nd，1.0mol％Gd，1.0mol％，2.1mol％和2.7mol％Ce掺杂的BNKBT陶瓷粉末组合物。在所有BNKBT陶瓷系统的X射线衍射（XRD）图案中观察到纯单钙钛矿结构，尽管发现掺杂导致由于其位点偏好导致峰值分裂和峰位置的变化。居里温度没有显着掺杂，但发现相对介电常数值增加。未掺杂的BNKBT陶瓷的非精通正常铁电特征在室温下用ND，GD和Ce掺杂与夹持偏振VS电磁场磁滞回路的偏振释放器特征。在掺杂的BNKBT陶瓷中观察到较高的现场诱导的应变水平，其中1摩尔％CE掺杂，在65kV / cm的E场下产生0.38％的巨型场诱导的菌株。另一方面，Nd-掺杂导致65kV / cm的最高可释放能量密度为0.64J / cm（3）。因此，由于其良好的电性能，发现稀土掺杂的BNKBT陶瓷是对数字致动器和高能密度电容器应用的承诺。

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