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Study on diamond thin film semiconducting devices for application to a development of hard-electronics high frequency driving circuit

机译:金刚石薄膜半导体器件在硬电子高频驱动电路开发中的应用研究

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摘要

In this paper, basic electrical properties of semiconducting diamond were investigated in order to check its capability for application to electron device. Especially, a field effect transistor was fabricated on diamond substrate, and its electrical properties were investigated. A clear current modulation characteristic was observed from the field effect transistor. Maximum breakdown voltage was - ISO V. An inverter circuit was fabricated on diamond substrate, and it showed good electrical performances at a high temperature of 220 ℃.
机译:本文研究了半导体金刚石的基本电性能,以检验其在电子器件中的应用能力。特别地,在金刚石衬底上制造了场效应晶体管,并研究了其电性能。从场效应晶体管观察到清晰的电流调制特性。最大击穿电压为-ISOV。在金刚石基板上制作了逆变器电路,在220℃的高温下表现出良好的电气性能。

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