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首页> 外文期刊>IEICE Transactions on Electronics >A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical Model
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A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical Model

机译：基于阵列级分析模型的AG-AND快闪存储器恒充注入编程方案设计

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摘要

A design methodology optimizing constant-charge-injection programming (CCIP) for assist-gate (AG)-AND flash memories is proposed. Transient circuit simulations using an array-level model including lucky electron model (LEM) current source describing hot electron physics enables a concept design over the whole memory-string in advance of wafer manufacturing. The dynamic programming behaviors of various CCIP sequences, obtained by circuit simulations using the model is verified with the measurement results of 90-nm AG-AND flash memory, and we confirmed that the simulation results sufficiently agree with the measurement, considering the simulation results give optimum bias AG voltage approximately within 0.2 V error. Then, we have applied the model to a conceptual design and have obtained optimum bit line capacitance value and CCIP sequence those are the most important issues involved in high-throughput programming for an AG-AND array.
机译：提出了一种优化用于辅助门（AG）-AND闪存的恒电荷注入编程（CCIP）的设计方法。使用包括描述热电子物理的幸运电子模型（LEM）电流源在内的阵列级模型进行的瞬态电路仿真，可以在晶圆制造之前对整个存储串进行概念设计。通过使用该模型的电路仿真获得的各种CCIP序列的动态编程行为已通过90nm AG-AND闪存的测量结果进行了验证，并且考虑到仿真结果，我们证实了仿真结果与测量足够吻合最佳偏置AG电压大约在0.2 V误差范围内。然后，我们将该模型应用于概念设计，并获得了最佳位线电容值和CCIP序列，这些是AG-AND阵列高通量编程中涉及的最重要问题。

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