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首页> 外文期刊>IETE Journal of Research >Design and Implementation of SPOT Switch, 6 Bit Digital Attenuator, 6 bit Digital Phase Shifter For L-Band T/R Module Using 0.7μm GaAs MMIC Technology
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Design and Implementation of SPOT Switch, 6 Bit Digital Attenuator, 6 bit Digital Phase Shifter For L-Band T/R Module Using 0.7μm GaAs MMIC Technology

机译：采用0.7μmGaAs MMIC技术的L波段T / R模块SPOT开关，6位数字衰减器，6位数字移相器的设计与实现

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The performance of modern radar systems with active phased array antennas is mainly driven by the performance of the microwave T/R modules. To reduce the size, weight, cost and power consumption, as well as to achieve better phase and amplitude accuracies for realizing low side lobe levels with an accurate beam steering, T/R modules, now-a-days, employ MMICs (Monolithic Microwave Integrated Circuits) for implementing Transmit/ Receive chain. The L-band SPDT Switch, 6-Bit Digital Attenuator, 6-Bit Digital Phase Shifter have been designed using GAETEC Hyderabad 0.7um GaAs MESFET Switch model to handle 30dBm peak power. All the above components have been designed and simulated using Agilent ADS CAD tool interfaced with Academy Layout. The SPDT Switch with insertion loss less than-1dB, isolation greater than 60dB and return loss better than 20dB has been realized on a single 3.0 mm × 2.35 mm GaAs chip. A 6-Bit Digital Attenuator has a 31.5dB attenuation range in 0.5dB increments, 2.5° phase error and return loss better than 15dB. The 6 bits are cascaded to form a complete attenuator on a double 3.5 mm × 2.35 mm GaAs chip with 3 attenuator bits in each for a better yield. A 6-Bit Digital Phase Shifter with 9dB insertion loss, return loss better than 15 dB has been realized on a two GaAs chips with size 4.0mm × 2.35mm and 3.0 mm × 2.35 mm and 3 phase bits in each chip for the better yield.
机译：具有有源相控阵天线的现代雷达系统的性能主要由微波T / R模块的性能决定。为了减小尺寸，减轻重量，降低成本和降低功耗，并实现更好的相位和幅度精度，以实现精确的波束控制，实现低旁瓣电平，如今，T / R模块采用MMIC（单片微波）集成电路）以实现发送/接收链。 L波段SPDT开关，6位数字衰减器，6位数字移相器采用GAETEC Hyderabad 0.7um GaAs MESFET开关模型设计，可处理30dBm峰值功率。以上所有组件都是使用与Academy Layout相连的Agilent ADS CAD工具进行设计和仿真的。在单个3.0 mm×2.35 mm GaAs芯片上实现了插入损耗小于-1dB，隔离度大于60dB，回波损耗小于20dB的SPDT开关。 6位数字衰减器的衰减范围为31.5dB，增量为0.5dB，相位误差为2.5°，回波损耗优于15dB。将这6个位级联，以在一个3.5 mm×2.35 mm的双GaAs芯片上级联形成一个完整的衰减器，每个芯片中都有3个衰减器位，以实现更好的良率。在两个尺寸分别为4.0mm×2.35mm和3.0 mm×2.35 mm的GaAs芯片上实现了具有9dB插入损耗，回波损耗优于15dB的6位数字移相器，并且每个芯片中都有3个相位位，以实现更好的成品率。

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