AZZURRO provides GaN-on-Si wafers for 1kV device

Gail Purvis

首页> 外文期刊>III-Vs Review >AZZURRO provides GaN-on-Si wafers for 1kV device

【24h】

AZZURRO provides GaN-on-Si wafers for 1kV device

机译：AZZURRO为1kV器件提供GaN-on-Si晶片

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Last year in August, AZZURRO Semiconductors came out of stealth mode and stirred considerable interest in the compound community, when CTO Dr Armin Dadgar gave a presentation on the epi-wafer foundry's successful growth of thick, crack-free 150mm GaN on Si-substrates at the ICNS conference in Bremen. Now the company is on the eve of being able to take the credit for its epi-wafers having broken the barrier to GaN-on-Si devices, achieving more than lkV breakdown voltage. These devices have been created for an industry customer by MicroGaN of Ulm.

机译：去年8月，AZZURRO半导体公司退出了隐形模式，并引起了化合物界的极大兴趣，当时首席技术官Armin Dadgar博士介绍了Epi-wafer晶圆厂成功在硅衬底上成功生长了厚且无裂纹的150mm GaN的情况。在不来梅举行的ICNS会议。现在，该公司正处于能够突破其GaN-on-Si器件壁垒，实现超过1kV击穿电压的外延晶圆获得信誉的前夕。这些器件是由Ulm的MicroGaN为工业客户创建的。

著录项

来源
《III-Vs Review》 |2006年第5期|p.28-29|共2页
作者
Gail Purvis;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Lateral charge spreading and device-to-device coupling in C-doped AlGaN/ GaN-on-Si wafers [J] . Singh Manikant, Karboyan Serge, Uren Michael J., Microelectronics & Reliability . 2019,第APRa期

机译：C掺杂AlGaN / Si上GaN晶片中的横向电荷扩散和器件间耦合
2. Realization of both enhancement and depletion mode MOSFETs on GaN-on-Si LED epitaxial wafer [J] . Piao Jinlong, Yan Jiabin, Li Jinjia, Semiconductor science and technology . 2020,第10期

机译：GaN-on-Si LED外延晶片上的增强和耗尽模式MOSFET实现
3. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility [J] . Xiaoqing Xu, Jiebin Zhong, Hongyun So, AIP Advances . 2016,第11期

机译：具有超高室温2DEG迁移率的AlGaN / GaN-on-Si HEMT结构的晶圆级MOCVD生长
4. LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges [C] . Nunoue S.-Y., Hikosaka T., Yoshida H., IEEE International Electron Devices Meeting . 2013

机译：与硅氮化镓（GaN-on-Si）技术和晶圆规模化挑战有关的LED制造问题
5. Interface Engineering and Bulk Trap Investigations in GaN-on-Si Lateral Heterojunction Power Devices [D] . Yang, Shu. 2014

机译：Gan-on-Si横向异性结电源装置的界面工程和散装陷阱调查
6. Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside [O] . Simonas Indrišiūnas, Evaldas Svirplys, Justinas Jorudas, 2021

机译：用AlGaN / GaN异质结构和背面的高电子移动装置激光加工透明晶片
7. AZZURRO provides GaN-on-Si wafers for 1kV device [O] . Purvis Gail 2006

机译：AZZURRO为1kV器件提供GaN-on-Si晶片

AZZURRO provides GaN-on-Si wafers for 1kV device

摘要

著录项

相似文献

相关主题

期刊订阅