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AlGaN/GaN FETs looms over GaAs technology

机译：气体技术上的隔离/脂肪织机

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摘要

In spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the 5th International Conference on Nitride Semiconductors at Nara was well attended with 442 presentations (24 countries; 60% from overseas), lively rump sessions and active participation by key figures including Professor Akasaki, the Honorary Chairman of the Conference. Sponsored by the Japan Society of Applied Physics with co-sponsorship by the 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices of the Japan Society for the Promotion of Science, technical sessions focused on topics ranging from growth and material characterisation to fabrication and commercialisation of devices such as high power FETs and laser diodes. This is a review of talks related to high power devices, AlGaN/GaN FETs, that have recently been the focus of intense scrutiny and may replace GaAs technology in the future.
机译：尽管人们对亚洲严重急性呼吸系统综合症的蔓延深感忧虑，但在奈良举行的第五届国际氮化物半导体国际会议吸引了442场演讲（24个国家/地区； 60％来自海外），活跃的臀部会议和关键人物的积极参与包括大会名誉主席赤崎教授。由日本应用物理学会和日本科学促进会第162届宽带隙半导体光子与电子器件委员会共同赞助的技术会议，重点是从生长和材料表征到半导体的制造和商业化诸如大功率FET和激光二极管之类的设备。本文是有关高功率器件AlGaN / GaN FET的讨论的回顾，AlGaN / GaN FET最近一直受到严格审查，并且将来有可能取代GaAs技术。

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