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Ammonia purification: performance measurement by FT-IR

机译：氨净化：通过FT-IR进行性能测量

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Removal of contaminants from NH. to low or sub-ppb levels is required in order to ensure the quality and performance of Compound Semiconductor devices. Oxygen, introduced into the epi-layer by O_2, CO, CO_2 and H_2O, is a p-type dopant. It counteracts the physical properties achieved by n-type dopants as well as leading to crystal lattice defects, Thus, minimizing atomic oxygen in the epi-layer is crucial for device performance since optical and electrical qualities depend on precursor and carrier gas purity. A novel technology for hydride gas purification has been developed, U.S. patent #6,241,955, Contaminants such as O_2, CO, CO_2, and H_2O are removed from the gas stream by a mixed metal-oxide material. The purification technology employs a reduced-iron co-precipitated with a higher oxidation state manganese oxide. The material is unaffected by the reactive nature of hydride gases and removes contaminants to less than 1 ppb, tested in N_2. O_2 is removed by simple oxidation and H_2O, CO, and CO_2 by adsorption.
机译：去除NH中的污染物。为了确保化合物半导体器件的质量和性能，要求将其降低至低或低于ppb的水平。由O_2，CO，CO_2和H_2O引入外延层的氧气是p型掺杂剂。它抵消了n型掺杂剂实现的物理性能，并导致晶格缺陷。因此，将外延层中的原子氧降至最低对于器件性能至关重要，因为光学和电气质量取决于前驱物和载气的纯度。已开发出用于氢化物气体净化的新技术，美国专利号6,241,955，通过混合的金属氧化物材料从气流中去除了诸如O_2，CO，CO_2和H_2O之类的污染物。净化技术采用与高氧化态氧化锰共沉淀的还原铁。该材料不受氢化物气体的反应性影响，并且将污染物去除至小于1 ppb（在N_2中测试）。 O_2通过简单的氧化除去，H_2O，CO和CO_2通过吸附除去。

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