Memory switching characteristics of In_2Se_3 amorphous thin films

M A Afifi; H H Labib; N A Hegab; M Fadel; A E Bekheet

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Memory switching characteristics of In_2Se_3 amorphous thin films

机译：In_2Se_3非晶薄膜的存储开关特性

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Electrical studies performed on films on In_2Se_3 compound exhibits non-linear Ⅰ-Ⅴ characteristics and switching phenomenon. The threshold voltage increases linearly with increasing film thickness while decreases exponentially with increasing temperature. The rapid transition between the highly resistive and conductive state was attributed to an electrothermal model initiated from Joule heating of a current channel.

机译：在In_2Se_3化合物上对薄膜进行的电学研究显示非线性Ⅰ-Ⅴ特性和开关现象。阈值电压随着膜厚度的增加而线性增加，而随着温度的增加而指数减小。高电阻状态和导电状态之间的快速过渡归因于电流通道的焦耳热引发的电热模型。

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《Indian Journal of Pure & Applied Physics》 |1995年第3期|p.129-134|共6页
作者
M A Afifi; H H Labib; N A Hegab; M Fadel; A E Bekheet;
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作者单位

Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt;

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正文语种 eng
中图分类物理学;
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Memory switching characteristics of In_2Se_3 amorphous thin films

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