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首页> 外文期刊>IEEE transactions on industrial informatics >Highest Maximum Power Point of Radially Distant Inductively Coupled Power Receivers With Deep Submicron CMOS
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Highest Maximum Power Point of Radially Distant Inductively Coupled Power Receivers With Deep Submicron CMOS

机译：具有深亚微米CMOS的径向远距离电感接收器的最高最大功率点

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摘要

Inductively coupled power receivers for embedded microsensors are often tiny and distant from their transmitting sources. To sustain microsensors as long as possible, the power receiver should draw power whenever possible and output the highest power possible. Of reported state-of-the-art technologies, switched resonant half-bridges require fewer components, are less breakdown-limited, and output as much or more power than the others. This paper derives and shows with measurements the highest possible maximum power point (MPP) for switched resonant half-bridges. The theory predicts the optimal time, duration, and frequency of the energy transfers that charge the battery. Measurements of a 0.18-mu m CMOS power receiver demonstrate that the receiver outputs more than 98.7% of the actual MPP at the predicted settings when the coupling factor between the transmitting and the receiving coils is 0.15%-1.14%.
机译：嵌入微传感器的电感耦合电力接收器通常是微小的并且远离其发射源。为了维持微传感器尽可能长，功率接收器应尽可能绘制电力并输出最高功率。在报告的最先进的技术中，切换谐振半桥需要更少的组件，不太击穿限制，并且输出比其他更多无功耗。本文通过测量开关谐振半桥的最高可能的最大功率点（MPP）来源和显示。该理论预测充电电池的能量转移的最佳时间，持续时间和频率。 0.18-MU M CMOS电力接收器的测量结果表明，当发送和接收线圈之间的耦合因子为0.15％-1.14％时，接收器在预测的设置下输出大于98.7％的实际MPP。

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