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首页> 外文期刊>Industry Applications, IEEE Transactions on >Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode
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Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode

机译：基于6.5 kV Si-IGBT / Si-PiN二极管，6.5 kV Si-IGBT / SiC-JBS二极管和10kV SiC-MOSFET / SiC-JBS的大功率中压转换器的设计比较二极管

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摘要

In this paper, a comparative design study of high-power medium-voltage three-level neutral-point-clamped converters with a 6.5-kV Si-IGBT/Si-PiN diode, a 6.5-kV Si-IGBT/SiC-JBS diode, and a 10-kV SiC-MOSFET/SiC-JBS diode is presented. A circuit model of a 100-A power module, including packaging parasitic inductances, is developed based on device die SPICE-based circuit models for each power device. Switching waveforms, characteristics, and switching power and energy loss measurements of the power modules, including symmetric/asymmetric parasitic inductances, are presented. High-power converter designs and SPICE circuit simulations are carried out, and power loss and efficiencies are compared for a pulsewidth-modulated (PMW) 1-MW power converter at 1-, 5-, and 10-kHz switching frequencies for application in shipboard power system and a PWM vector-controlled and a line-frequency angle-controlled 20- to 40-MVA power converter at 60-Hz, 540-Hz, and 1-kHz switching frequencies for active mobile substation application. It is shown that the 6.5-kV Si-IGBT incorporating an antiparallel SiC-JBS diode, with its high efficiency performance up to 5-kHz switching frequency, is a strong candidate for megawatt-range power converters. The 10-kV SiC-MOSFET/SiC-JBS diode remains an option for higher switching frequency (5–10 kHz) high-power converters.
机译：本文对具有6.5 kV Si-IGBT / Si-PiN二极管，6.5 kV Si-IGBT / SiC-JBS二极管的大功率中压三电平中性点钳位转换器的对比设计研究，并提出了一个10kV的SiC-MOSFET / SiC-JBS二极管。基于每个功率器件基于SPICE的器件模型，开发了包括封装寄生电感在内的100A电源模块的电路模型。给出了电源模块的开关波形，特性以及开关功率和能量损耗的测量结果，包括对称/非对称寄生电感。进行了大功率转换器设计和SPICE电路仿真，并比较了脉宽调制（PMW）1-MW功率转换器在1-kHz，5-kHz和10kHz开关频率下的功率损耗和效率电源系统和PWM矢量控制和线频率角度控制的20至40 MVA电源转换器，频率分别为60 Hz，540 Hz和1 kHz，适用于有源移动变电站应用。结果表明，具有反并联SiC-JBS二极管的6.5kV IGBT具有高达5kHz的开关频率的高效率性能，是兆瓦级功率转换器的理想选择。 10 kV SiC-MOSFET / SiC-JBS二极管仍然是更高开关频率（5–10 kHz）大功率转换器的选择。

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