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首页> 外文期刊>Inorganic materials >Modeling of the Growth Kinetics of Vertically Aligned Carbon Nanotube Arrays on Planar Substrates and an Algorithm for Calculating Rate Coefficients of This Process
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Modeling of the Growth Kinetics of Vertically Aligned Carbon Nanotube Arrays on Planar Substrates and an Algorithm for Calculating Rate Coefficients of This Process

机译:平面基板上垂直对齐碳纳米管阵列的生长动力学建模及其计算速率系数的算法

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摘要

We have constructed a physicomathematical model for carbon nanotube growth and compared calculation results obtained in this model with experimental data. In our experimental work, carbon nanotube arrays were grown by chemical vapor deposition in flowing acetylene, ammonia, and argon at temperatures from 550 to 950 degrees C. As a catalyst, we used a 4-nm-thick nickel film on the surface of titanium nitride. The proposed model takes into account the pyrolysis of hydrocarbons on the surface of catalyst nanoparticles; the formation of a surface barrier layer, which slows down and stops nanotube array growth; and interaction of the buffer layer with carbon in the catalyst nanoparticles. In constructing the model, we have examined mechanisms of the individual processes involved and obtained temperature dependences of the rate coefficients that describe nanotube growth. It is these dependences which ensure good agreement between calculation results and experimental data.
机译:我们已经构建了一种用于碳纳米管生长的物理化模型,并在该模型中获得了实验数据的比较了计算结果。在我们的实验工作中,通过在流动的乙炔,氨和氩气中通过化学气相沉积生长碳纳米管阵列在550至950℃的温度下。作为催化剂,我们在钛的表面上使用了4nm厚的镍膜氮化物。所提出的模型考虑了催化剂纳米颗粒表面上的烃的热解;形成表面阻挡层,减缓并停止纳米管阵列生长;缓冲层在催化剂纳米颗粒中与碳的相互作用。在构建模型时,我们已经检查了所涉及的个体过程的机制,并获得描述纳米管生长的速率系数的温度依赖性。这是根据计算结果和实验数据之间确保良好一致的这些依赖。

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