Direct Atomic Emission Analysis of Bismuth and Germanium Oxides and Bismuth Orthogermanate Crystals Using Two-Jet Arc Plasma

N. P. Zaksas

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Direct Atomic Emission Analysis of Bismuth and Germanium Oxides and Bismuth Orthogermanate Crystals Using Two-Jet Arc Plasma

机译：使用双射流电弧等离子体直接分析铋和锗氧化物以及高锗酸铋晶体的原子发射。

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摘要

Simple, high-speed procedures have been proposed for direct analysis of Bi_2O_3, GeO_2, and crystals of bismuth orthogermanate (BGO) by atomic emission spectroscopy with a high-power two-jet arc plasma as an excitation source. The detection limits for 36 impurities have been shown to lie in the ranges of 0.008-2 (Bi_2O_3), 0.006-4 (GeO_2), and 0.008-3.5 μg/g (BGO).

机译：提出了一种简单，高速的方法，通过原子发射光谱法以高功率两喷弧等离子体为激发源，直接分析Bi_2O_3，GeO_2和高锗酸铋（BGO）晶体。对36种杂质的检出限已显示在0.008-2（Bi_2O_3），0.006-4（GeO_2）和0.008-3.5μg/ g（BGO）的范围内。

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来源
《Inorganic materials》 |2014年第5期|489-494|共6页
作者
N. P. Zaksas;
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作者单位

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 3, Novosibirsk, 630090 Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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专利

1. Application of Atomic-Absorption Analysis to Determination of Ge and Bi in Germanium and Bismuth Oxides and in Waste of Bismuth Orthogermanate Production [J] . Korda T.M., Beizel N. F. Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов . 2000,第9期

机译：原子吸收分析法在锗和铋氧化物及高锗酸铋生产废料中锗和铋的测定中的应用
2. Application of Atomic-Absorption Analysis to Determination of Ge and Bi in Germanium and Bismuth Oxides and in Waste of Bismuth Orthogermanate Production [J] . Korda T.M., Beizel N. F. Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов . 2000,第9期

机译：原子吸收分析在锗和硼酸铋中测定Ge和Bi的测定，浪费铋正交生成
3. Atomic-absorption analysis used for determination of Ge and Bi in germanium and bismuth oxides and wastes in the production of bismuth ortho-germanate crystals [J] . T. M. Korda, N. F. Beizel, N. I. Petrova, Industrial Laboratory: Diagnostics of Materials . 2000,第9期

机译：原子吸收分析法测定原锗酸铋晶体生产中锗和氧化铋及废物中的Ge和Bi
4. Temperature Dependence of Drift Mobility in Bismuth Germanium Oxide and Bismuth Silicon Oxide [C] . D. W. Bloom, S. W. S. McKeever . 1997

机译：氧化铋锗和氧化铋铋漂移漂移的温度依赖性
5. Ultrasonic attenuation in bismuth silicon oxide and bismuth germanium oxide. [D] . Sandhu, Parmjit Kaur. 1980

机译：氧化铋铋和氧化锗铋的超声衰减。
6. Twenty Element Concentrations in Human Organs Determined by Two-Jet Plasma Atomic Emission Spectrometry [O] . Natalia P. Zaksas, Svetlana E. Soboleva, Georgy A. Nevinsky 2019

机译：二次喷射等离子体原子发射光谱法测定人体器官中的二十种元素浓度
7. Determination of lead, tin and bismuth in solutions by inductively coupled plasma atomic emission spectrometry utilizing direct graphite cup insertion technique. [O] . Masao UMEMOTO, Masaaki KUBOTA 1986

机译：电感耦合等离子体原子发射光谱法利用直接石墨杯插入技术测定溶液中铅，锡和铋。
8. Calibration Constants for the 1986 BGO (Bismuth Germanium Oxide) Crystals Matrix [R] . Ferroni, F., Longo, E. 1987

机译：1986 BGO（铋氧化锗）晶体矩阵的校准常数

Direct Atomic Emission Analysis of Bismuth and Germanium Oxides and Bismuth Orthogermanate Crystals Using Two-Jet Arc Plasma

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