...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Inorganic materials >Concept of Impurity-Dislocation Magnetism in III-V Compound Semiconductors
【24h】

Concept of Impurity-Dislocation Magnetism in III-V Compound Semiconductors

机译：III-V族化合物半导体中杂质位错磁性的概念

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The ability of dislocations to attract impurity atoms is examined from the viewpoint of the feasibility to produce linear, extended magnetic structures in transition-metal-doped diamagnetic III-V compound semiconductor hosts. To understand the possible formation mechanisms and expected properties of such structures, we analyze a number of experimental studies that address the precipitation of magnetically inactive atoms onto edge dislocations in metals and semiconductors. The general trends identified are used in analysis of the properties of magnetically active atoms located around dislocations. We examine the feasibility of creating novel magnetic semiconductors in which transition-metal-doped dislocations would serve as magnetic memory cells. The research direction addressed in this paper is defined as the concept of impurity-dislocation magnetism in III-V compound semiconductors.
机译：从在过渡金属掺杂的反磁性III-V族化合物半导体主体中产生线性，延伸的磁性结构的可行性的角度，研究了位错吸引杂质原子的能力。为了了解此类结构的可能形成机理和预期特性，我们分析了许多实验研究，这些研究涉及将无磁性原子沉积到金属和半导体的边缘位错上。确定的一般趋势用于分析位错周围的磁活性原子的性质。我们研究了创建新型金属半导体的可行性，其中过渡金属掺杂的位错将用作磁性存储单元。本文所研究的方向被定义为III-V族化合物半导体中杂质位错磁性的概念。

著录项

  • 来源
    《Inorganic materials》 |2013年第1期|6-13|共8页
  • 作者

    V. P. Sanygin; E. A. Tishchenko; Dau Hieu Shi; A. D. Izotov;

  • 作者单位

    Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991 Russia;

    Kapitza Institute for Physical Problems, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 119334 Russia;

    Peoples' Friendship University of Russia, ul. Miklukho-Maklaya 6, Moscow, 117198 Russia;

    Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991 Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号