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Temperature Effect On The Photoluminescence Intensity And Eu~(2+) Excited State Lifetime In Euga_2s_4 And Euga_2s_4:er~(3+)

机译:温度对Euga_2s_4和Euga_2s_4:er〜(3+)的光致发光强度和Eu〜(2+)激发态寿命的影响

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The photoluminescence (PL) spectra and Eu~(2+) excited state lifetime of EuGa_2S_4 and EuGa_2S_4:Er~(3+) have been studied in the range 78-500 K. The spectra show a band at 545 nm, due to the 4f~65d→ 4f~7(~8S_(7/2) transition. With increasing temperature, the full width at half maximum Γ(T) of the PL band of EuGa_2S_4 and EuGa_2S_4: Er~(3+) crystals increases from 0.15 to 0.22 and from 0.13 to 0.19 eV, respectively. Over the entire temperature range studied, Γ(T) is a linear function of T~(1/2). The 545-nm emission intensity and Eu~(2+) excited state lifetime in EuGa_2S_4 and EuGa_2S_4:Er~(3+) vary exponentially with temperature. The luminescence quenching energies evaluated from the Arrhenius plots of 1(10~3/T) and t(10~3/T) coincide (0.10 eV) within the error of determination.
机译:EuGa_2S_4和EuGa_2S_4:Er〜(3+)的光致发光(PL)光谱和Eu〜(2+)激发态寿命已在78-500 K范围内进行了研究。 4f〜65d→4f〜7(〜8S_(7/2)转变。随着温度的升高,EuGa_2S_4和EuGa_2S_4的PL带的半峰全宽Γ(T):Er〜(3+)晶体从0.15增加分别为0.22和0.13至0.19 eV。在整个研究温度范围内,Γ(T)是T〜(1/2)的线性函数。545nm发射强度和Eu〜(2+)激发态EuGa_2S_4和EuGa_2S_4:Er〜(3+)的寿命随温度呈指数变化,从1(10〜3 / T)和t(10〜3 / T)的Arrhenius图评估的发光猝灭能量在(0.10 eV)确定的错误。

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